Related papers: Stimulated emission in erbium doped silicon rich n…
We photo-excite slab polymer waveguides doped with J-aggregating dye molecules and measure the leaky emission from strongly coupled waveguide exciton polariton modes at room temperature. We show that the momentum of the waveguide exciton…
Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the X-ray to the mid-infrared. Nonetheless, fabrication challenges and…
We demonstrate a silicon nitride trench waveguide deposited with bowtie antennas for plasmonic enhanced optical trapping. The sub-micron silicon nitride trench waveguides were fabricated with conventional optical lithography in a low cost…
The development of broadband microresonator frequency combs at visible wavelengths is pivotal for the advancement of compact and fieldable optical atomic clocks and spectroscopy systems. Yet, their realization necessitates resonators with…
We present experimental results for a fully etched C-band grating coupler with reduced back reflection fabricated in an 800 nm silicon nitride platform. Back-reflections are reduced by symmetrically interrupting the first few grates around…
We report specific heat and thermal conductivity of gadolinium- and yttrium-doped amorphous silicon thin films measured using silicon-nitride membrane-based microcalorimeters. Addition of gadolinium or yttrium to the amorphous silicon…
The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near infrared can be activated in Si as originationg from defects…
We theoretically show that energy absorption in crystalline silicon can be controlled by two-color femtosecond double-pulse irradiation, in which two temporally separated pulses with different wavelengths interact sequentially with the…
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…
Silicon nanowires have been surface functionalized with the enzyme urease for biosensor applications to detect and quantify urea concentration. The device is nanofabricated from a silicon on insulator (SOI) wafer with a top down lithography…
We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si…
We experimentally demonstrate wide-band (>100 THz) frequency down-conversion of near-infrared (NIR) femtosecond-scale pulses from an Er:fiber laser to the mid-infrared (MIR) using four-wave-mixing (FWM) in photonic-chip silicon-nitride…
Silicon nitride microresonators driven by strong pump pulses can generate squeezed light in a dominant spectral-temporal mode, a central resource for continuous-variable quantum computation. In the high parametric gain regime, several…
We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one,…
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not…
Significant (up to 6%) absorption of microwave power focused on a thin fiber (the diameter is three orders of magnitude less than the wavelength) by an ellipsoidal reflector is demonstrated experimentally. This new physical effect can be…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
The effect of doping in Si3N4 membranes on the secondary electron yield is investigated using Monte Carlo simulations of the electron-matter interactions. The effect of the doping level of silicon doping and the effect of the distribution…
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN…
Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal…