Related papers: Mn valence instability in La2/3Ca1/3MnO3 thin film…
The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the…
We report the results of a detailed study of the structural, magnetic and magnetotransport properties of as-grown and annealed Ga0.91Mn0.09As thin films grown on (311)A and (311)B GaAs substrates. The high Curie temperature and hole density…
Room temperature ferromagnetism of GaMnN thin films is awaked by a mild hydrogenation treatment of samples synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn-L2,3 near edge x-ray absorption fine…
This study was aimed to investigate the thickness dependent morphological changes of Mn films deposited on GaAs substrates by thermal evaporation technique. Ni films were deposited under same conditions to perform comparative study of the…
We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different…
Highly (001) oriented thin films of Co2MnSi have been grown on lattice matched GaAs(001) without a buffer layer. Stoichiometric films exhibited a saturation magnetization slightly reduced from the bulk value and films grown at the highest…
Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of…
We investigate the influence of a well-defined reversible biaxial strain <=0.12 % on the magnetization (M) of epitaxial ferromagnetic manganite films. M has been recorded depending on temperature, strain and magnetic field in 20 - 50 nm…
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion…
We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on…
We report a rather high dependence of the dielectric permittivity on the magnetic field in La2/3Ca1/3MnO3. The variation is maximum at around 270 K, little above the Curie temperature, TC, and it reaches a 30% under only 0.5 T. We attribute…
In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree) in O2 ambient for 10 min. The samples have been…
We present a study of anisotropy of transport and magnetic properties in La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film prepared by pulsed-laser deposition onto a LaAlO_{3} sunstrate. We found a non-monotonic dependence of magnetoresistance…
Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to…
The strain effect from a substrate is an important experimental route to control electronic and magnetic properties in transition-metal oxide (TMO) thin films. Using hard x-ray photoemission spectroscopy, we investigate the strain…
Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…
Understanding and manipulating properties emerging at a surface or an interface require a thorough knowledge of structure-property relationships. We report a study of a prototype oxide system, La2/3Sr1/3MnO3 grown on SrTiO3(001), by…
A Li-Al-O thin film materials library, deposited by inert magnetron sputtering and post-deposition annealing in O2 atmosphere, was used to study the effects of different annealing temperatures (300 to 850{\deg}C) and durations (1 min to 7…
In this work, we report the growth and functional characterizations of multiferroic TbMnO3 thin films grown on Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. By performing detailed magnetic and ferroelectric properties…
Magnetic resonance spectra of EuTiO3 in both bulk and thin film form were taken at temperatures from 3-350 K and microwave frequencies from 9.2-9.8 and 34 GHz. In the paramagnetic phase, magnetic resonance spectra are determined by magnetic…