Related papers: Mn valence instability in La2/3Ca1/3MnO3 thin film…
We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on…
Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures. A2-type…
Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells…
The Curie temperature and x-ray photoemission spectra of thin films of La_{0.67}(Ca_{x}Sr_{1-x})_{0.33}MnO_{3} (LCSMO) have been studied as a function of the Ca/Sr ratio. The films were grown by off-axis cosputtering from individual targets…
Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at $720 ^\circ$C and oxygen pressure $p_{O_2}=1-25 $Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the…
We have grown La$_{0.3}$Sr$_{0.7}$CoO$_{3-{\delta}}$ thin films by pulsed laser deposition on (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_3$)$_{0.7}$ substrates with and without a protective LaAlO$_3$ capping layer and investigated their structural…
We report a comparative study of the properties of very thin films of La$_{0.67}$Ca$_{0.33}$MnO$_3$ grown epitaxially under strain on flat SrTiO$_3$ (STO), lattice matched on NdGaO$_3$ (NGO), and strained on $1^{\circ}$-miscut STO. We use…
The Channel-Spark method was used for deposition of highly oriented ferromagnetic La0.7Sr0.3MnO3 films on NdGaO3 substrates. It was found that additional oxygen decreases the film quality suppressing the Curie temperature and…
We report a Raman scattering investigation of KTa1-xNbxO3 (x = 0.35, 0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 K to 720 K is similar to the structural phase…
We investigate the room temperature electronic properties of MnTiO3 synthesised by different preparation conditions. For this purpose, we prepared MnTiO3 under two different cooling rates, one is naturally cooled while the other is quenched…
X-ray absorption spectroscopy was used to determine the valence state in La$_2$Co$_{1-x}$Mn$_{1+x}$O$_6$ ($x\approx 0.23$) thin films. We found that in spite of the non-stoichiometry, Co is in a divalent state while Mn ions show a mixed…
Epitaxial LaRh1/2Mn1/2O3 thin films have been grown on (001)-oriented LaAlO3 and SrTiO3 substrates using pulsed laser deposition. The optimized thin film samples are semiconducting and ferromagnetic with a Curie temperature close to 100 K,…
With pulsed laser deposition we have grown c-axis oriented thin films of the nominal composition LaMnO$_{3}$ (LMO) on LSAT(001) substrates. We find that, depending on the oxygen background pressure during growth, the LMO films contain…
The electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…
The magnetic dead layers in films a few nanometers thick are investigated for La$_{0.7}$Sr$_{0.3}$MnO$_3$ on (001)-oriented SrTiO$_3$ (STO), LaAlO$_3$ (LAO) and (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrates. An anomalous…
We have performed x-ray photoemission spectroscopy (XPS) on thin films of (001) and (200) oriented La(0.67)Ca(0.33)MnO(3) grown on (100) and (110) SrTiO(3) substrates by off-axis sputtering. The films were examined by XPS without exposing…
We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing…
A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 -…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…