Related papers: Half integer quantum Hall effect in high mobility …
We report on the unusual nature of nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counter-propagating edge states. Such states, intrinsic to massless Dirac…
The fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. The…
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…
Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed…
Quantum Hall effect in 1,2-layer graphene is analyzed. The transverse and longitudinal resistivity are found to be universal functions of the filling factor and temperature. At fixed magnetic field mode the magneto-transport problem is…
We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature…
The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics.…
We consider the fractional quantum Hall effect (FQHE) at the filling factor $8/17$, where signatures of incompressibility have been observed in the zeroth Landau level of bilayer graphene. We propose an Abelian state described by the…
The nature of fractional quantum Hall (FQH) states is determined by the interplay between the Coulomb interaction and the symmetries of the system. The unique combination of spin, valley, and orbital degeneracies in bilayer graphene is…
Unlike regular electron spin, the pseudospin degeneracy of Fermi points in graphene does not couple directly to magnetic field. Therefore, graphene provides a natural vehicle to observe the integral and fractional quantum Hall physics in an…
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding…
The quantum Hall (QH) effect, the quantum spin Hall (QSH) effect and the quantum valley Hall (QVH) effect are three peculiar topological insulating phases in graphene. They are characterized by three different types of edge states. These…
Bernal bilayer graphene hosts even denominator fractional quantum Hall states thought to be described by a Pfaffian wave function with nonabelian quasiparticle excitations. Here we report the quantitative determination of fractional quantum…
Magnetotransport of conventional semiconductor based double layer systems with barrier suppressed interlayer tunneling has been a rewarding subject due to the emergence of an interlayer coherent state that behaves as an excitonic…
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…
We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts…
We present a single electron approach to analyse the magnetotransport properties of the monolayer graphene as a function of both, the gate voltage and the magnetic field; and, also, their evolution with temperature. The model proposed means…
Theoretical studies of the fractional quantum Hall effect (FQHE) in graphene have so far focused on the plausibility and stability of the previously known FQHE states for the interaction matrix elements appropriate for graphene. We consider…
We apply Laughlin's gauge argument to analyze the $\nu=0$ quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the…
The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative…