Related papers: Critical current density for spin transfer torque …
The dependence of the critical current of spin transfer torque-driven magnetization dynamics on the free-layer thickness was studied by taking into account both the finite penetration depth of the transverse spin current and spin pumping.…
Current-induced dynamics in spin valves including composite free layer with antiferromagnetic interlayer exchange coupling is studied theoretically within the diffusive transport regime. We show that current-induced dynamics of a synthetic…
The critical current of the spin transfer torque-driven magnetization dynamics was studied by taking into account both spin pumping and the finite penetration depth of the transverse spin current. We successfully reproduced the recent…
Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dampinglike spin-orbit torque ({\xi}_DL^j) and the…
Spin-transfer torque and current induced spin dynamics in spin-valve nanopillars with the free magnetic layer located between two magnetic films of fixed magnetic moments is considered theoretically. The spin-transfer torque in the limit of…
We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied…
We have recently reported that the spin transfer torque switching current density is very sensitive to not only the junction sizes but also the exchange stiffness constants of the free layer according to the micromagnetic simulations. The…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…
Quantitative theory of the Josephson effect in SFIFS junctions (S denotes bulk superconductor, F - metallic ferromagnet, I - insulating barrier) is presented in the dirty limit. Fully self-consistent numerical procedure is employed to solve…
It is experimentally shown that the critical current for onset of spin-torque instability in current-perpendicular-to-plane spin-valves can be strongly enhanced using "synthetic ferrimagnet" free-layers of form FM1/Ru/FM2 (FM=ferrromagnet).…
Spin transfer in asymmetric Co/Cu/Co bilayer magnetic nanopillars junctions has been studied at low temperature as a function of free-layer thickness. The phase diagram for current-induced magnetic excitations has been determined for…
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter,…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…
In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP)…
We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements…
The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect…
A new current induced spin-torque transfer effect has been observed in a single ferromagnetic layer without resorting to multilayers. At a specific current density of one polarity injected from a point contact, abrupt resistance changes due…
The spin transfer switching current distribution within a cell was studied in magnetic tunnel junction based structures having alumina barriers with resistance-area product (RA) of 10 to 30 Ohm-um2 and tunneling magneto-resistance (TMR) of…
It is shown that the maximum stable output of a CPP-GMR sensor is increased significantly by using a synthetic ferrimagnet free layer, provided the electron current flows from free layer to reference layer. This free layer allows a larger…
We investigate the dependence of switching current density on the junction sizes in the spin transfer torque nanopillar structures by using micromagnetic simulations. While the macro spin model predicts weak dependence of switching current…