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Related papers: Cs-induced charge transfer on (2x4)-GaAs(001) stud…

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In this work, we report an interesting observation of partial ionic bonding due to charge transfer in homogeneous sodium clusters. The charge transfer causes the electronic charge to accumulate on the surface, and the resulting charges on…

Mesoscale and Nanoscale Physics · Physics 2015-04-16 Vaibhav Kaware , Kavita Joshi

Charge density waves (CDWs) are symmetry-broken ground states that commonly occur in low-dimensional metals due to strong electron-electron and/or electron-phonon coupling. The non-equilibrium carrier distribution established via…

Materials Science · Physics 2019-07-24 M. Chávez-Cervantes , G. E. Topp , S. Aeschlimann , R. Krause , S. A. Sato , M. A. Sentef , I. Gierz

Photoluminescence measurements were carried out on Be $\delta$-doped GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 J. Łusakowski , M. Sakowicz , K. J. Friedland , R. Hey , K. Ploog

The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing upassivated with passivated nanowires. We directly see the influence of…

Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si…

When a noble gas atom approaches a solid surface, it is adsorbed via the Van der Waals force, which is called physisorption. In this thesis, several experimental results concerning physisorbed atoms at surfaces are presented. First, photon…

Mesoscale and Nanoscale Physics · Physics 2015-04-21 Akihiko Ikeda

The temperature dependence of in plane optical conductivity has been investigated for Ca0.86Pr0.14Fe2As2 which shows a structural transition from tetragonal (T) to collapsed tetragonal(cT) phase at TcT=73 K. Upon entering the cT phase,…

Superconductivity · Physics 2015-06-17 Run Yang , Congcong Le , Lei Zhang , Bing Xu , Wei Zhang , Kashif Nadeem , Hong Xiao , Jiangping Hu , Xianggang Qiu

Under irradiation of amorphous $As_{x}Se_{100-x}$ films by band-gap light, it was observed that lateral mass transport of the film material changed the direction of movement in the region (4 < x < 5 at%.) of topological structural…

Materials Science · Physics 2018-05-11 M. L. Trunov , P. M. Lytvyn

Adsorbed noble gas atoms donate (on the average) a fraction of an electronic charge to the substrate metal. The effect has been experimentally observed as an adsorptive change in the electronic work function. The connection between the…

Condensed Matter · Physics 2009-10-31 A. Widom , M. S. Tomassone , Y. N. Srivastava , M. Hannout

First-principles calculations using density functional theory based on norm-conserving pseudopotentials have been performed to investigate the Mg adsorption on the Si(001) surface for 1/4, 1/2 and 1 monolayer coverages. For both 1/4 and 1/2…

Soft Condensed Matter · Physics 2007-05-23 R. Shaltaf , E. Mete , Ş. Ellialtıoğlu

Comparing the results of transport measurements of strongly correlated two-dimensional holes in a GaAs heterojunction-insulated-gate field-effect-transistor obtained before and after a brief photo-illumination, the light-induced disorder is…

Mesoscale and Nanoscale Physics · Physics 2013-06-27 Jian Huang , L. N. Pfeiffer , K. W. West

We have synthesized single-layer graphene on Cu foils using chemical vapor deposition method and transferred the graphene to the top of a Si/SiO2 substrate with a pair of prefabricated Ti/Au electrodes. A resistive graphene-based gas sensor…

Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001)…

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and…

The adsorption of oxygen on the Ag(001) is investigated by means of density functional techniques. Starting from a characterization of the clean silver surfaces oxygen adsorption in several modifications (molecularly, on-surface,…

Materials Science · Physics 2009-11-10 M. Gajdos , A. Eichler , J. Hafner

Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 V. A. Kulbachinskii , I. S. Vasil'evskii , R. A. Lunin , G. Galistu , A. de Visser , G. B. Galiev , S. S. Shirokov , V. G. Mokerov

The effect of annealing at 250 C on the carrier depth profile, Mn distribution, electrical conductivity, and Curie temperature of (Ga,Mn)As layers with thicknesses > 200 nm, grown by molecular-beam epitaxy at low temperatures, is studied by…

Materials Science · Physics 2009-11-11 W. Limmer , A. Koeder , S. Frank , V. Avrutin , W. Schoch , R. Sauer , K. Zuern , J. Eisenmenger , P. Ziemann , E. Peiner , A. Waag

To help provide insight into the remarkable catalytic behavior of the oxygen/silver system for heterogeneous oxidation reactions, purely sub-surface oxygen, and structures involving both on-surface and sub-surface oxygen, as well as…

Materials Science · Physics 2009-11-10 Wei-Xue Li , Catherine Stampfl , Matthias Scheffler

We study the photo-desorption occurring in H$_2$O:CO:NH$_3$ ice mixtures irradiated with monochromatic (550 and 900 eV) and broad band (250--1250 eV) soft X-rays generated at the National Synchrotron Radiation Research Center (Hsinchu,…

Astrophysics of Galaxies · Physics 2018-11-28 A. Jimenez-Escobar , A. Ciaravella , C. Cecchi-Pestellini , C. -H. Huang , N. -E. Sie , Y. -J. Chen , G. M. Munoz Caro

We present an in-depth analysis of the atomic and electronic structure of the quasi one-dimensional (1D) surface reconstruction of Ga on Si(112) based on Scanning Tunneling Microscopy and Spectroscopy (STM and STS), Rutherford…

Other Condensed Matter · Physics 2007-05-23 P. C. Snijders , C. Gonzalez , S. Rogge , R. Perez , J. Ortega , F. Flores , H. H. Weitering