Related papers: Temperature dependent Neel wall dynamics in GaMnAs…
We report experimental studies of conductance and magnetoconductance of GaAs/AlGaAs quantum well structures where both wells and barriers are doped by acceptor impurity Be. Temperature dependence of conductance demonstrate a non-monotonic…
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall…
Mechanically bent nickel nanowires show clear features in their room temperature magnetoresistance when a domain wall is pinned at the location of the bend. By varying the direction of an applied magnetic field, the wire can be prepared…
Magnetic properties of MnAs were studied as a function of temperature with a superconducting interference device (5 K to 350 K), and atomic force microscopy/magnetic force microscopy (20 K to 360 K). Structural and magnetic properties of…
The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uniaxial part in the in-plane magnetic anisotropy (90+/-Delta)…
In order to study the dependence of the coercive force of sintered magnets on temperature, nucleation and domain wall propagation at the grain boundary are studied as rate-determining processes of the magnetization reversal phenomena in…
Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. Here we use molecular dynamic simulations to study the domain wall stability in the prototypical…
Domain walls in nano-constrictions are investigated with a focus on thermal properties. In general, the magnetization component perpendicular to the easy axis which in a domain wall usually occurs has a value different from the easy-axis…
It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration,…
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the…
We show that suitably-designed magnetic semiconductor heterostructures consisting of Mn delta-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the…
Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted…
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…
We study resistivity temperature dependence of a three dimensional metamagnet near the metamagnet phase transition point in the case when magnetic structure tends to split into regions with high and low magnetization. We show that in the…
It has recently been shown that domain walls in ferromagnets can be moved in the presence of thermal gradients. In this work we study the motion of narrow domain walls in low-dimensional systems when subjected to thermal gradients. The…
We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall…
We evaluate the topological character of TaAs through a detailed study of the angular, magnetic-field and temperature dependence of its magnetoresistivity and Hall-effect(s), and of its bulk electronic structure through quantum oscillatory…
We performed detailed ac susceptibility measurements on Pr$_{1-x}$Ag$_x$MnO$_3$ ($x$=0.15, 0.20) manganites and observed unusual and interesting features, which are associated with the domain walls and the effects of grain-boundaries on…
A theoretical and numerical investigations of the quantum tunneling of the domain walls in ferromagnets and weak ferromagnets was performed taking into account the interaction between walls and thermal excitations of a crystal. The…