Related papers: Anomalous quantum Hall effect in epitaxial graphen…
Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven…
We argue that by inducing superconductivity in graphene via the proximity effect, it is possible to observes the "quantum valley Hall effect". In the presence of magnetic field, supercurrent causes "valley pseudospin" to accumulate at the…
The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth…
Graphene membranes suspended off electric contacts or other rigid supports are prone to elastic strain, which is concentrated at the edges and corners of the samples. Such a strain leads to an algebraically varying effective magnetic field…
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH)…
The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication…
We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer…
The unusual quantum Hall effect (QHE) in graphene is often discussed in terms of Dirac fermions moving with a linear dispersion relation. The same phenomenon will be explained in terms of the more traditional composite bosons, which move…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band…
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…
We have performed magnetotransport measurements on a multi-layer graphene flake. At the crossing magnetic field Bc, an approximately temperature-independent point in the measured longitudinal resistivity, which is ascribed to the direct…
We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $\Delta_1$ and $\Delta_2$. We consider two main situations, $\Delta_1=0,\Delta_2\neq0$ and $\Delta_1=-\Delta_2$. They are…
Electrons in clean macroscopic samples of graphene exhibit an astonishing variety of quantum phases when strong perpendicular magnetic field is applied. These include integer and fractional quantum Hall states as well as symmetry broken…
We investigate new properties of the Dirac electrons in the finite graphene sample under perpendicular magnetic field that emerge when an in-plane electric bias is also applied. The numerical analysis of the Hofstadter spectrum and of the…
Monolayer graphene under a strong magnetic field near charge neutrality manifests the integer and fractional quantum Hall effects. Since only some of the four spin/valley flavors available to the electrons in each Landau level manifold are…
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device…
We review the basic aspects of electrons in graphene (two-dimensional graphite) exposed to a strong perpendicular magnetic field. One of its most salient features is the relativistic quantum Hall effect the observation of which has been the…
Producing large-area single-crystalline graphene is key to realizing its full potential in advanced applications, including twistronics. Yet, controlling graphene growth kinetics to avoid grain boundaries or multilayer growth remains…