Related papers: Mesoscopic magnetoelectric effect in chaotic quant…
A new type of magneto-optical effect in piezoelectrics is predicted. A low frequency behavior of Faraday effect is found.
A conventional and rotating magnetoelectric effect of a half-filled spin-electron model on a doubly decorated square lattice is investigated by exact calculations. An importance of the electron hopping and spatial orientation of the…
We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel…
Spintronic phenomena to date have been established in magnets with collinear moments, where the spin injection through the spin Seebeck effect (SSE) is always along the out-of-plane direction. Here, we report the observation of a vector SSE…
Microwave-radiation induced giant magnetoresistance oscillations recently discovered in high-mobility two-dimensional electron systems in a magnetic field, are analyzed theoretically. Multiphoton-assisted impurity scatterings are shown to…
We use inelastic neutron scattering to study the effect of a magnetic field on the neutron spin resonance (Er = 3.6 meV) of superconducting FeSe (Tc = 9 K). While a field aligned along the in-plane direction broadens and suppresses the…
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose.…
Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled…
We report on electrical resistivity, magnetoresistance (MR) and Hall effect measurements in four non-superconducting BaFe$_{2-x}$TM$_x$As$_2$ (TM = Mn, Cu and Ni) single crystals with small values of the chemical substitution $x$. The spin…
The ultrafast non-thermal control of magnetization has recently become feasible in canted antiferromagnets through photomagnetic instantaneous pulses [A.V. Kimel {\it et al.}, Nature {\bf 435}, 655 (2005)]. In this experiment circularly…
We developed a new technique for measuring the thermodynamic entropy as a function of the magnetic field angle. This technique enables high-resolution angle-resolved measurements of the entropy in an unprecedentedly short measuring time.…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
In this study, we investigate the magnetoelectric (ME) effect of the newly discovered antiferromagnetic (AFM) compound Ce$_{3}$TiBi$_{5}$ with a hexagonal structure (space group $P6_{3}$/$mcm$). In this system, Ce ions form zig-zag chains…
We theoretically investigate an intrinsic nonlinear anomalous Hall effect (INAHE) in space-time ($\mathcal{PT}$) symmetric antiferromagnetic metals. The INAHE is characterized by an asymmetric and non-dissipative part of the second-order…
The Anomalous Hall Effect (AHE) manifests as a transverse voltage proportional to magnetization in ferromagnetic materials under the application of a charge current, being an indispensable tool for probing magnetism, especially in nanoscale…
Solid understanding of current induced torques is key to the development of current and voltage controlled magnetization dynamics in ultrathin magnetic heterostructures. To evaluate the size and direction of such torques, or effective…
Double tunneling junctions of ferromagnet-superconductor-ferromagnet electrodes (FSF) show a jump in the conductance when a parallel magnetic field reverses the magnetization of one of the ferromagnetic electrodes. This change is generally…
We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the…
We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling…
We investigated the effect of an electric field on the interface magnetic anisotropy of a thin MgO/Fe/MgO layer using density functional theory. The perpendicular magnetic anisotropy energy (MAE) increases not only under electron depletion…