Related papers: Bipolar resistive switching in amorphous titanium …
In this article, we explore the temperature dependence of the electrical glassy dynamics in insulating amorphous indium oxide (a-InOx) and granular Al films. We use non-isothermal gate voltage protocols, which can reveal changes in the…
We have investigated transport properties of CrO2 thin films deposited on TiO2 and sapphire substrates. The films are good metals down to low temperatures. The residual resistivity is of the order of 6 micro-ohhmcm for films deposited on…
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the…
Amorphous metal oxide thin-film transistors (TFT) are fabricated using InOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density of dopant is low in the film, change in the electrical properties showed strong dependence on…
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…
In this paper we demonstrate experimentally that crystalline phases appear in amorphous titanium oxide upon processing with ultrafast laser pulses. Amorphous titanium thin films were produced by plasma-enhanced chemical vapor deposition…
The magnetic-field-tuned quantum superconductor-insulator transitions of disordered amorphous indium oxide films are a paradigm in the study of quantum phase transitions, and exhibit power-law scaling behavior. For superconducting indium…
The ability to actively regulate heat flow at the nanoscale could be a game changer for applications in thermal management and energy harvesting. Such a breakthrough could also enable the control of heat flow using thermal circuits, in a…
Vanadium oxides are strongly correlated materials which display metal-insulator transitions as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control…
TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was…
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically…
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
Thin films of Co-TiO2 are deposited on silicon and quartz substrates using Pulse Laser Deposition (PLD) process at various oxygen partial pressures ranging from 6.6 x 10-3 Pascals (Pa) to 53 Pa. Crystal structure, transport and magnetic…
Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a…
Two-level systems (TLSs) are tunneling states commonly found in amorphous materials that electrically couple to qubits, resonators, and vibrational modes in materials, leading to energy loss in those systems. Recent studies suggest that…
Low resistivity (~3-24 mOhm.cm) with tunable n- and p-type phase pure Cu2O thin films have been grown by pulsed laser deposition at 25-200 0C by varying the background oxygen partial pressure (O2pp). Capacitance data obtained by…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…
An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both…
Amorphous metallic foams are prospective materials due to unique combination of their mechanical and energy-absorption properties. In the present work, atomistic dynamics simulations are performed under isobaric conditions with the pressure…