Related papers: Gate-tunable bandgap in bilayer graphene
The recent constructions of flat moir\'e minibands in specifically twisted multilayer graphene and twisted transition metal dichalcogenides (TMDs) have facilitated the observation of strong correlations with a convenient tunability. These…
A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in…
Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability,…
Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The…
Magic-angle twisted bilayer graphene (MATBG) combines in one single material different phases like insulating, metallic and superconducting. These phases and their in-situ tunability make MATBG an important platform for the fabrication of…
Graphene shows a strong promise for detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer…
Twisted double bilayer graphene (tDBLG) is a moir\'e material that has recently generated significant interest because of the observation of correlated phases near the magic angle. We carry out atomistic Hartree theory calculations to study…
Flatbands with extremely narrow bandwidths on the order of a few mili-electron volts can appear in twisted multilayer graphene systems for appropriate system parameters. Here we investigate the electronic structure of a twisted bi-bilayer…
Growth of graphene on monolayer transition-metal dichalcogenides presents opening on band gap and giant spin-orbit coupling which paves the way to achieve a useful hybrid structure for electronics and spintronics applications. Increase of…
According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moir\'e patterns produced by small misalignments between its individual layer honeycomb lattices. We have…
Twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed. We observe prominent splitting and intensity quenching…
Superfluidity has recently been reported in double electron-hole bilayer graphene. The multiband nature of the bilayers is important because of the very small band gaps between conduction and valence bands. The long range nature of the…
The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited…
The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…
Despite much theoretical work, developing a comprehensive ab initio model for twisted bilayer graphene (TBG) has proven challenging due to the inherent trade-off between accurately describing the band structure and incorporating the…
We demonstrate new mechanisms for gate tunable current partition at topological zero-line intersections in a graphene-based current splitter. Based on numerical calculations of the non-equilibrium Green's functions and Landauer-B\"{u}ttiker…
We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements,…
A graphene bilayer phototransistor (GBL-PT) is proposed and analyzed. The GBL-PT under consideration has the structure of a field-effect transistor with a GBL as the channel and the back and top gates. The positive bias of the back gate…