Related papers: Effect of interdiffusion and quantum confinement o…
A Raman scattering study covering the entire substitution range of the FeSe$_{1-x}$S$_x$ solid solution is presented. Data were taken as a function of sulfur concentration $x$ for $0\le x \le 1$, of temperature and of scattering symmetry.…
We report Raman scattering and visible to near-infrared absorption spectra of solid hydrogen under static pressure up to 285 GPa at 85-140 K. We obtain pressure dependences of vibron and phonon modes in agreement with previously determined…
Bose-Fermi mixtures naturally appear in various physical systems. In semiconductor heterostructures, such mixtures can be realized, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems…
Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high…
We report results of Raman scattering experiments on twin-free BaFe$_{2}$As$_{2}$ with the main focus placed on understanding the influence of electronic and spin degrees of freedom on the lattice dynamics. In particular, we scrutinize the…
Inelastic neutron-scattering experiments have been carried out on polycrystalline samples of the FeSe$_{1-x}$ superconductors. We report the phonon density of states for FeSe$_{1-x}$ with Tc$\approx$8 K. The phonon cutoff frequency is…
Isotopic substitution of boron and carbon is applied for the identification of the vibrational modes of heavily boron-doped diamond synthesized by high-pressure high-temperature technique. None of the bands in the Raman spectra are shifting…
In this paper, we review recent development in the theory of resonant inelastic light (Raman) scattering in one-dimensional electron systems. The particular systems we have in mind are electron doped GaAs based semiconductor quantum wire…
We have measured Raman scattering spectra of single-crystalline FeTe0.6Se0.4 (T_c ~ 14.5 K) and its parent compound Fe1.074Te at various temperatures. In the parent compound Fe1.074Te, A1g and B1g modes have been observed at 157.5 and 202.3…
We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density.…
We have measured polarized Raman scattering spectra of the Fe$_{1-x}$Co$_{x}$Sb$_{2}$ and Fe$_{1-x}$Cr$_{x}$Sb$_{2}$ (0$\leq x\leq $0.5) single crystals in the temperature range between 15 K and 300 K. The highest energy $B_{1g}$ symmetry…
Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study of phonon modes in $\beta$-Ga$_{2}$O$_{3}$ provides insights…
We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr$_3$) with a thickness ranging from three to twenty layers (3~L to 20~L) revealed by the Raman scattering (RS) technique. Systematic…
We report high pressure X-ray diffraction and a detailed systematic Raman measurements on $ReS_2$ sample, which is mechanically exfoliated from a single crystal. A few new Bragg peaks are observed to emerge above 6 GPa indicating a…
Low energy optical modes of MBE-grown In1-xGaxN thin films with different values of x are investigated using Raman spectroscopy. We also studied the influence of Raman excitation frequency using red and green lasers on scattering intensity…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
The band structure of bilayer graphene is tunable by introducing a relative twist angle between the two layers, unlocking exotic phases, such as superconductor and Mott insulator, and providing a fertile ground for new physics. At…
Confined acoustic and optical phonons in Si nanoclusters embedded in sapphire, synthesized using ion-beam implantation are investigated using Raman spectroscopy. The l = 0 and l = 2 confined acoustic phonons, found at low Raman shift, are…
We consider theoretically a superlattice formed by thin conducting layers separated spatially between insulating layers. The dispersion of two coupled phonon-plasmon modes of the system is analyzed by using Maxwell's equations, with the…
We report finite-volume simulations of the phonon Boltzmann transport equation (BTE) for heat conduction across the heterogeneous interfaces in SiGe superlattices. The diffuse mismatch model incorporating phonon dispersion and polarization…