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This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix,…

We discuss unreported transitions of oxidized GaAs surfaces between (super)hydrophilic and hydrophobic states when stored in ambient conditions. Contact angles higher than 90deg and high adhesive force were observed for several air-aged…

Materials Science · Physics 2011-08-25 A. Gocalinska , K. Gradkowski , V. Dimastrodonato , L. O. Mereni , G. Juska , G. Huyet , E. Pelucchi

We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy,…

Mesoscale and Nanoscale Physics · Physics 2018-06-15 P. A. Alekseev , M. S. Dunaevskiy , D. A. Kirilenko , A. N. Smirnov , V. Yu. Davydov , V. L. Berkovits

Results of recent density functional theory calculations for alkali metal adsorbates on close-packed metal surfaces are discussed. Single adatoms on the (111) surface of Al and Cu are studied with the self-consistent surface Green-function…

mtrl-th · Physics 2016-09-07 C. Stampfl , M. Scheffler

The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is…

Adsorption of ammonia at NH3/NH2/H covered GaN(0001) surface was analyzed using results of ab initio calculations. The whole configuration space of partially NH3/NH2/H covered GaN(0001) surface was divided into zones differently pinned…

Materials Science · Physics 2016-11-09 Pawel Kempisty , Stanislaw Krukowski

Here we present an angle-resolved photoelectron spectroscopy (ARPES), x-ray absorption spec-troscopy (XAS), and density-functional theory (DFT) investigations of water and ammonia ad-sorption on graphene/Ni(111). Our results on…

Materials Science · Physics 2015-05-27 S. Boettcher , M. Weser , Yu. S. Dedkov , K. Horn , E. N. Voloshina , B. Paulus

Photocatalytic nitrogen reduction under ambient conditions represents a promising pathway toward sustainable ammonia production. However, the fundamental mechanisms, particularly the role of photogenerated charge carriers and their…

Materials Science · Physics 2026-04-13 Manoj Dey , Ritesh Kumar , Abhishek Kumar Singh

First principles total-energy pseudopotential calculations have been performed to investigate STM images of the (110) cross-sectional surface of Mn-doped GaAs. We have considered configurations with Mn in interstitial positions in the…

Materials Science · Physics 2007-05-23 A. Stroppa

We have investigated STM images of the (110) cross-sectional surface of Mn-doped GaAs using first principles total-energy pseudopotential calculations. We focus on configurations with Mn interstitial in the uppermost surface layers. In…

Materials Science · Physics 2011-12-30 A. Stroppa , M. Peressi

With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…

Materials Science · Physics 2009-11-11 Shengqiang Zhou , A. Vantomme , B. S. Zhang , H. Yang , M. F. Wu

The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and…

Mesoscale and Nanoscale Physics · Physics 2015-06-23 S. Vezian , F. Semond , J. Massies , D. W. Bullock , Z. Ding , P. M. Thibado

We report on experimental evidence for the formation of a two dimensional Si/Au(110) surface alloy. In this study, we have used a combination of scanning tunneling microscopy, low energy electron diffraction, Auger electron spectroscopy and…

The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…

Materials Science · Physics 2015-05-13 V. F. Kovalenko , S. V. Shutov , Ye. A. Baganov , M. M. Smyikalo

Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n…

The adsorption of oxygen on the Ag(001) is investigated by means of density functional techniques. Starting from a characterization of the clean silver surfaces oxygen adsorption in several modifications (molecularly, on-surface,…

Materials Science · Physics 2009-11-10 M. Gajdos , A. Eichler , J. Hafner

The arrangement of B~atoms in a doped Si(111)-$(\sqrt{3}\times\sqrt{3})R30^{\circ}$:B system was studied using near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the…

We demonstrate for the first time that when a methanethiol adsorbed on the regular Cu(111) surface, the dissociative structure is thermodynamically more stable than the intact one. The computational results show that at low temperature the…

Materials Science · Physics 2009-11-13 Jian-Ge Zhou , Quinton L. Williams , Frank Hagelberg

Surface sensitive x-ray scattering techniques with atomic scale resolution are employed to investigate the microscopic structure of the surface of three classes of liquid binary alloys: (i) Surface segregation in partly miscible binary…

Disordered Systems and Neural Networks · Physics 2007-05-23 Holger Tostmann , Elaine DiMasi , Oleg G. Shpyrko , Ben M. Ocko , Peter S. Pershan , Moshe Deutsch

Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of this charge originates in molecules adsorbed on the GaN…

Materials Science · Physics 2025-09-09 Yury Turkulets , Nitzan Shauloff , Or Haim Chaulker , Raz Jelinek , Ilan Shalish