Related papers: Correcting Limited-Magnitude Errors in the Rank-Mo…
Codes for rank modulation have been recently proposed as a means of protecting flash memory devices from errors. We study basic coding theoretic problems for such codes, representing them as subsets of the set of permutations of $n$…
We consider rank modulation codes for flash memories that allow for handling arbitrary charge-drop errors. Unlike classical rank modulation codes used for correcting errors that manifest themselves as swaps of two adjacently ranked…
We construct Gray codes over permutations for the rank-modulation scheme, which are also capable of correcting errors under the infinity-metric. These errors model limited-magnitude or spike errors, for which only single-error-detecting…
Rank modulation is a way of encoding information to correct errors in flash memory devices as well as impulse noise in transmission lines. Modeling rank modulation involves construction of packings of the space of permutations equipped with…
Local rank modulation scheme was suggested recently for representing information in flash memories in order to overcome drawbacks of rank modulation. For $s\leq t\leq n$ with $s|n$, $(s,t,n)$-LRM scheme is a local rank modulation scheme…
Rank modulation has been recently proposed as a scheme for storing information in flash memories. While rank modulation has advantages in improving write speed and endurance, the current encoding approach is based on the "push to the top"…
The rank modulation scheme has been proposed for efficient writing and storing data in non-volatile memory storage. Error-correction in the rank modulation scheme is done by considering permutation codes. In this paper we consider codes in…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
Limited magnitude asymmetric error model is well suited for flash memory. In this paper, we consider the construction of asymmetric codes correcting single error over $\mathbb{Z}_{2^{k}r}$ and which are based on so called $B_{1}[4](2^{k}r)$…
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rank-modulation, as a generalization of the rank-modulation scheme, has been…
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. Local rank-modulation is a generalization of the rank-modulation scheme, which has…
The rank-modulation scheme has been recently proposed for efficiently storing data in nonvolatile memories. Error-correcting codes are essential for rank modulation, however, existing results have been limited. In this work we explore a new…
Motivated by the rank modulation scheme, a recent work by Sala and Dolecek explored the study of constraint codes for permutations. The constraint studied by them is inherited by the inter-cell interference phenomenon in flash memories,…
Local rank modulation scheme was suggested recently for representing information in flash memories in order to overcome drawbacks of rank modulation. For $0 < s\leq t\leq n$ with $s$ divides $n$, an $(s,t,n)$-LRM scheme is a local rank…
Block codes, which correct asymmetric errors with limited-magnitude, are studied. These codes have been applied recently for error correction in flash memories. The codes will be represented by lattices and the constructions will be based…
We address the problem of multipermutation code design in the Ulam metric for novel storage applications. Multipermutation codes are suitable for flash memory where cell charges may share the same rank. Changes in the charges of cells…
This paper presents and analyzes a novel concatenated coding scheme for enabling error resilience in two distributed storage settings: one being storage using existing regenerating codes and the second being storage using locally repairable…
Permutation codes, in the form of rank modulation, have shown promise for applications such as flash memory. One of the metrics recently suggested as appropriate for rank modulation is the Ulam metric, which measures the minimum…
The goal of this paper is to construct systematic error-correcting codes for permutations and multi-permutations in the Kendall's $\tau$-metric. These codes are important in new applications such as rank modulation for flash memories. The…
We study permutations over the set of $\ell$-grams, that are feasible in the sense that there is a sequence whose $\ell$-gram frequency has the same ranking as the permutation. Codes, which are sets of feasible permutations, protect…