English

Local Rank Modulation for Flash Memories

Information Theory 2013-11-20 v1 math.IT

Abstract

Local rank modulation scheme was suggested recently for representing information in flash memories in order to overcome drawbacks of rank modulation. For stns\leq t\leq n with sns|n, (s,t,n)(s,t,n)-LRM scheme is a local rank modulation scheme where the nn cells are locally viewed through a sliding window of size tt resulting in a sequence of small permutations which requires less comparisons and less distinct values. The distance between two windows equals to ss. To get the simplest hardware implementation the case of sliding window of size two was presented. Gray codes and constant weight Gray codes were presented in order to exploit the full representational power of the scheme. In this work, a tight upper-bound for cyclic constant weight Gray code in (1,2,n)(1,2,n)-LRM scheme where the weight equals to 22 is given. Encoding, decoding and enumeration of (1,3,n)(1,3,n)-LRM scheme is studied.

Keywords

Cite

@article{arxiv.1311.4864,
  title  = {Local Rank Modulation for Flash Memories},
  author = {Michal Horovitz},
  journal= {arXiv preprint arXiv:1311.4864},
  year   = {2013}
}

Comments

arXiv admin note: text overlap with arXiv:1310.5515 by other authors without attribution

R2 v1 2026-06-22T02:10:44.978Z