Related papers: Electrical Transport in High Quality Graphene pnp …
We investigate high-order harmonic generation (HHG) in graphene with a quantum master equation approach. The simulations reproduce the observed enhancement in HHG in graphene under elliptically polarized light [N. Yoshikawa et al, Science…
Graphene quantum dots are promising candidates for qubits due to weak spin-orbit and hyperfine interactions. The hyperfine interaction, controllable via isotopic purification, could be the key to further improving the coherence. Here, we…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder…
The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of…
Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers…
A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor interface. Quite generally, the Schottky-Mott…
Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of…
Graphene is a fascinating material for exploring fundamental science questions as well as a potential building block for novel electronic applications. In order to realize the full potential of this material the fabrication techniques of…
Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…
The combination of superconductivity and quantum Hall (QH) effect is regarded as a key milestone in advancing topological quantum computation in solid-state systems. Recent quantum interference studies suggest that QH edge states can…
Reproducibility and quantization in quantum spin Hall platforms is a persisting challenge, limiting their use in hybrid realizations of topological superconductivity. We report robust and reproducible quantized transport in a graphene…
Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum…
We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete…
We investigate the superconducting proximity effect through graphene in the long diffusive junction limit, at low and high magnetic field. The interface quality and sample phase coherence lead to a zero resistance state at low temperature,…
Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have…
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…
We have studied zigzag and armchair graphene nano ribbons (GNRs), described by the Hubbard Hamiltonian using quantum many body configuration interaction methods. Due to finite termination, we find that the bipartite nature of the graphene…
We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary…