Related papers: Spin Hall Drag
In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the…
We propose a mechanism and develop a theory for nonreciprocal Coulomb drag resistance. This effect arises in electron double-layer systems in the presence of an in-plane magnetic field in noncentrosymmetric conductors or in bilayers with…
The Coulomb drag is a many-body effect observed in proximized low-dimensional systems. It appears as emergence of voltage in one of them upon passage of bias current in another. The magnitude of drag voltage can be strongly affected by…
We derive the spin continuity equation by using the Noether's theorem. A new type of spin-tensor Hall current is found in the continuity equation. The spin-tensor Hall current is originating from the coupling of the spin-tensor and the…
The mutual influence of two layers with strongly loclized electrons is exercised through the random Coulomb shifts of site energies in one layer caused by electron hops in the other layer. We trace how these shifts give rise to a voltage…
The phenomena of the spin-Hall effect, initially proposed over three decades ago in the context of asymmetric Mott skew scattering, was revived recently by the proposal of a possible intrinsic spin-Hall effect originating from a strongly…
An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin, which offer potential…
We consider spin and charge flow in normal metals. We employ the Keldysh formalism to find transport equations in the presence of spin-orbit interaction, interaction with magnetic impurities, and non-magnetic impurity scattering. Using the…
For the spin Hall effect arising from strong band-structure spin-orbit coupling, a semiclassical Boltzmann theory reasonably addressing the intriguing disorder effect called side-jump is still absent. In this paper we describe such a theory…
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double…
We introduce a previously unknown spin-related transport phenomenon, consisting in a transformation (swapping) of spin currents, in which the spin direction and the direction of flow are interchanged. Swapping is due to the spin-orbit…
The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We…
We show that spin-orbit interaction and elastic spin-Hall effect can exist in a classical mechanical system consisting of a two-dimensional honeycomb lattice of masses and springs. The band structure shows the presence of splitting at K…
The direct electrical method was used to study the behavior of the spin Hall effect in a magnetic field perpendicular to the injection current in aluminum samples with resistivities that differed by two orders of magnitude at a temperature…
We have studied the evolution of the Spin Hall Effect in the regime where the material size responsible for the spin accumulation is either smaller or larger than the spin diffusion length. Lateral spin valve structures with Pt insertions…
We report on a topological Hall effect possibly induced by scalar spin chirality in a quasi-two- dimensional helimagnet Fe$_{1+x}$Sb. In the low-temperature region where the spins on interstitial- Fe (concentration $x=0.3$) intervening the…
The spin Hall magnetoresistance (SMR) phenomenon includes the fundamental physics of spin current, and originates from spin accumulation at an interface owing to the spin Hall effect. Although bilayers are the simplest structure exhibiting…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnetic field, current-induced in-plane spin polarization is…
We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the…