Related papers: Field Effect Transistors for Terahertz Detection: …
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the…
We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson…
Photon detection with quantum-level sensitivity is particularly challenging in the terahertz regime (0.1-10 THz), which contains ~98% of all the photons existing in the universe. Near-quantum-limited terahertz spectrometry has so far only…
We propose a terahertz radiation source based on the excitation of plasma resonances in graphene structures by means of mixing two NIR laser signals with a THz difference frequency. The process is the photo-thermo-electric effect which has…
Chip-based terahertz (THz) devices are emerging as versatile tools for manipulating mm-wave frequencies in the context of integrated high-speed communication technologies for potential sixth-generation (6G) wireless applications. The…
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…
The Terahertz frequency range bears intriguing opportunities, beyond very advanced applications in spectroscopy and matter control. Peculiar quantum phenomena are predicted to lead to light emission by non-trivial mechanisms. Typically,…
We demonstrate a high temperature performance quantum detector of Terahertz (THz) radiation based on three-dimensional metamaterial. The metamaterial unit cell consists of an inductor-capacitor (LC) resonator laterally coupled with antenna…
The plasma wave instabilities in ballistic Field Effect Transistors (FETs) have a promise of developing sensitive THz detectors and efficient THz sources. One of the difficulties in achieving efficient resonant plasmonic detection and…
We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron's effective mass in miniband, which result in a…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
We present an electrically tunable terahertz two dimensional plasmonic interferometer with an integrated detection element that down converts the terahertz fields to a DC signal. The integrated detector utilizes a resonant plasmonic…
Terahertz (THz) wave manipulation based on laser filaments-plasma channels formed by femtosecond laser-induced air ionization-has emerged as a promising platform for free-space THz applications. However, in-situ characterization of the…
Imaging systems operating in the terahertz part of the electromagnetic spectrum are in great demand because of the distinct characteristics of terahertz waves in penetrating many optically-opaque materials and providing unique spectral…
Terahertz (THz) radiation is a powerful tool with widespread applications ranging from imaging, sensing, and broadband communications to spectroscopy and nonlinear control of materials. Future progress in THz technology depends on the…
We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear…
We study gated field effect transistors (FETs) with fractal geometries under Dyakonov and Shur asymmetric boundary conditions, where the source and drain span the left and right edges of the device respectively. An AC THz potential…
Terahertz time domain spectroscopy employing free-space radiation has frequently been used to probe the elementary excitations of low-dimensional systems. The diffraction limit blocks its use for the in-plane study of individual laterally…
Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defective transistors and circuits. Using a TCAD model for SiGe HBTs…
Terahertz (THz) near-field imaging is a flourishing discipline [1], with applications from fundamental studies of beam propagation [2,3] to the characterisation of metameterials [4,5] and waveguides [6,7]. Beating the diffraction limit…