Terahertz Parametric Gain in Semiconductor Superlattices
Mesoscale and Nanoscale Physics
2009-10-02 v1 Statistical Mechanics
Abstract
We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron's effective mass in miniband, which result in a parametric resonance. We have established a theoretical feasibility of phase-sensitive parametric amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. Therefore a formation of destructive domains of high electric field inside the superlattice can be prevented. Here we concentrate on the parametric up- and down-conversion of electromagnetic radiation from available frequencies to desirable THz frequency range.
Cite
@article{arxiv.0706.2967,
title = {Terahertz Parametric Gain in Semiconductor Superlattices},
author = {Timo Hyart and Alexey V. Shorokhov and Kirill N. Alekseev},
journal= {arXiv preprint arXiv:0706.2967},
year = {2009}
}