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Electrically-driven optical antennas can serve as compact sources of electromagnetic radiation operating at optical frequencies. In the most widely explored configurations, the radiation is generated by electrons tunneling between metallic…

The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse…

Polymer micro- and nano-fibers, made of organic light-emitting materials with optical gain, show interesting lasing properties. Fibers with diameters from few tens of nm to few microns can be fabricated by electrospinning, a method based on…

We investigate the specific optical regime occurring at short wavelengths, in the high absorption regime, in silicon thin-films patterned by periodically arranged nano-holes. Near-field scanning optical microscopy indicates that the…

Precise control and manipulation of optical fields on a nanoscale is one of the most important and challenging problems in "nanophotonics". Since optical wavelength is on a much larger microscale, it is impossible to employ conventional…

One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3…

Lasing at the nanometre scale promises strong light-matter interactions and ultrafast operation. Plasmonic resonances supported by metallic nanoparticles have extremely small mode volumes and high field enhancements, making them an ideal…

Ionization injection is attractive as a controllable injection scheme for generating high quality electron beams using plasma-based wakefield acceleration. Due to the phase dependent tunneling ionization rate and the trapping dynamics…

Miniaturization of light-emitting diodes (LEDs) can enable high-resolution augmented and virtual reality displays and on-chip light sources for ultra-broadband chiplet communication. However, unlike silicon scaling in electronic integrated…

We introduce a novel hybrid metal-dielectric nanoantenna composed of dielectric (crystalline silicon) and metal (silver) nanoparticles. A high-permittivity dielectric nanoparticle allows to achieve effective light harvesting, and…

Narrow optical band pass filters are widely used in systems with optical processing of information, color displays development and optical computers. We show that such ultra filters can be created by means of nanoparticles which consist of…

We fabricate nanoscale lamps which have a filament consisting of a single multiwalled carbon nanotube. After determining the nanotube geometry with a transmission electron microscope, we use Joule heating to bring the filament to…

A nanometer-sized dielectric particle lying on a dielectric substrate is exposed to the flux of low-energy electrons, ion and electron fluxes from a cold plasma and the fluxes from the combination of these two sources with the help of…

We report the possibility to generate tremendous light-field enhancements within shallow nano-trenches made in a high index dielectric material, because of resonant behaviours reminiscent of what we get with sub-wavelength plasmonic…

Progress in electron-beam spectroscopies has recently enabled the study of optical excitations with combined space, energy and time resolution in the nanometer, millielectronvolt and femtosecond domain, thus providing unique access into…

Sensitivity to molecular chirality is crucial for many fields, from biology and chemistry to the pharmaceutical industry. By generating superchiral light, nanophotonics has brought innovative solutions to reduce the detection volume and…

A conventional free-electron laser is useful but large, driven by a beam with many relativistic electrons. Although, recently, keV electron beams have been used to excite broadband radiation from material chips, there remains a quest for a…

Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C.…

We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons…

A compact low-energy and high-intensity electron source for material aging applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a 5 MW electron beam at the anode location. The corresponding dose that can…