Related papers: Resistive switching in nanogap systems on SiO2 sub…
BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with…
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent…
The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
The scaling limitations of conventional transistors demand alternative device concepts capable of dynamic reconfigurability at the atomic scale. Resistive switching (RS), a key mechanism for neuromorphic computing and non-volatile memory,…
High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase change and ferroelectric…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic…
We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO)/Au system. We show that the superconducting state…
Nature inspired neuromorphic architectures are being explored as an alternative to imminent limitations of conventional complementary metal-oxide semiconductor (CMOS) architectures. Utilization of such architectures for practical…
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is demonstrated. Comprehensive experimental investigations reveal…
We report active control of the friction force at the contact between a nanoscale asperity and a La$_{0.55}$Ca$_{0.45}$MnO$_3$ (LCMO) thin film using electric fields. We use friction force microscopy under ultrahigh vacuum conditions to…
Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical…
The effect of electrical resistivity switching in nanographite films is described. In difference with cases published elsewhere the switching in nanographite films occurs from stable high conductive to metastable low conductive state.…
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic…
We demonstrate a controllable electromagnetic wave reflector/absorber for different polarizations with metamaterial involving electromagnetic resonant structures coupled with diodes. Through biasing at different voltages to turn ON and OFF…
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device…
Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…