Related papers: Defect induced rigidity enhancement in layered sem…
Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu$_x$Bi$_2$Se$_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier…
We present a simple picture of the gauge factor (GF) enhancement in highly heterogeneous materials such as thick-film resistors. We show that when the conducting phase is stiffer than the insulating one, the local strains within this latter…
Mechanism of superconductivity (SC) in a purely interacting electron system has been one of the most challenging issues in condensed matter physics. In the BCS theory, the Landau's Fermi liquid is a normal state against which an SC…
We show that pronounced modulations in spin and charge densities can be induced by the insertion of a single hole in an otherwise half-filled 2-leg Hubbard ladder. Accompanied with these modulations is a loosely bound structure of the doped…
The discovery of a new family of high Tc materials, the iron arsenides (FeAs), has led to a resurgence of interest in superconductivity. Several important traits of these materials are now apparent, for example, layers of iron tetrahedrally…
We observe that pressure-induced amorphization of Ga2SeTe2 (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with periodic and semi-periodic two-dimensional vacancy structures…
The electrochemical doping transformation in organic semiconductor devices is studied in application to light-emitting cells. It is shown that the device performance can be significantly improved by utilizing new fundamental properties of…
We present an ab-initio study of Ru substitution in two different compounds, BaFe2As2 and LaFeAsO, pure and F-doped. Despite the many similarities among them, Ru substitution has very different effects on these compounds. By means of an…
In this paper we present a thorough first-principles based density functional theory study of the structural stability, electronic, magnetic, and optical properties of pristine and doped gallium phosphide (GaP) monolayers. The pristine GaP…
We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…
Thanks to its high refractive index contrast, band gap and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet…
In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices. However, defects and disorder at the…
Novel mechanisms of defect annealing in solids are discussed, which are based on the large amplitude anharmonic lattice vibrations, a.k.a. intrinsic localized modes or discrete breathers (DBs). A model for amplification of defect annealing…
The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measurements reveal that Si sheet doping doesn't change the…
Layered perovskite iridates realize a rare class of Mott insulators that are predicted to be strongly spin-orbit coupled analogues of the parent state of cuprate high-temperature superconductors. Recent discoveries of pseudogap, magnetic…
Surface-states of topological insulators are assumed to be robust against non-magnetic defects in the crystal. However, recent theoretical models and experiments indicate that even non-magnetic defects can perturb these states. Our…
We argue that parametrically strong enhancement of a thermoelectric current can be observed in conventional superconductors doped by magnetic impurities. This effect is caused by violation of the symmetry between electron-like and hole-like…
The competition, coexistence and cooperation of various orders in low-dimensional materials like spin, charge, topological orders and charge-density-wave has been one of the most intriguing issues in condensed matter physics. In particular,…
Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid density-functional defect calculations. This includes the interaction between the rare-earth dopant and native point defects (Ga and N vacancies) and…
We present a selection of stack designs for MOVPE grown InxGa1-xAs metamorphic buffer layers following various convex-down compositional continuous gradients of the In content, showing that defect generation and strain can be managed in a…