Chemically gated electronic structure of a superconducting doped topological insulator system

L. A. Wray; S. Xu; M. Neupane; A. V. Fedorov; Y. S. Hor; R. J. Cava; M. Z. Hasan

doi:10.1088/1742-6596/449/1/012037

Chemically gated electronic structure of a superconducting doped topological insulator system

Superconductivity 2015-06-16 v1 Mesoscale and Nanoscale Physics

Authors: L. A. Wray , S. Xu , M. Neupane , A. V. Fedorov , Y. S. Hor , R. J. Cava , M. Z. Hasan

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Abstract

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu $_x$ Bi $_2$ Se $_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

Keywords

topological insulator superconductivity angle resolved photoemission spectroscopy chemical gating electronic structure Cu$_x$Bi$_2$Se$_3$ Majorana Fermion

Cite

@article{arxiv.1308.4467,
  title  = {Chemically gated electronic structure of a superconducting doped topological insulator system},
  author = {L. A. Wray and S. Xu and M. Neupane and A. V. Fedorov and Y. S. Hor and R. J. Cava and M. Z. Hasan},
  journal= {arXiv preprint arXiv:1308.4467},
  year   = {2015}
}

Chemically gated electronic structure of a superconducting doped topological insulator system

Abstract

Keywords

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