Related papers: Gate-controlled current switch in graphene

Graphene is an interesting debated topic between scientists because of its unique properties such as tunable conductivity. Graphene conductivity can be varied by either electrostatic or magnetostatic gating or via chemical doping, which…

We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…

Valley filtering processes have been explored in different graphene-based configurations and scenarios to control transport responses. Here we propose graphene multi-terminal set-ups properly designed to obtain valley filtered currents in a…

We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and the mutual capacitive…

Using the non-equilibrium Green's functions formalism in a tight binding model, the spin-dependent transport in armchair graphene nanoribbon (GNR) structures controlled by a ferromagnetic gate is investigated. Beyond the oscillatory…

Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…

We investigate gated trilayer graphene partially devoid of outer layers and forming a system of two trilayers connected by a single layer of graphene. A difference in the stacking order of trilayers leads to the appearance of gapless…

The ground state of a graphene sheet at charge neutrality in a perpendicular magnetic field remains enigmatic, with various experiments supporting canted antiferromagnetic, bond ordered, and even charge density wave phases. A promising…

Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to realize long distance spin transport, together with…

We present a beam splitter in a suspended, ballistic, multiterminal, bilayer graphene device. By using local bottomgates, a p-n interface tilted with respect to the current direction can be formed. We show that the p-n interface acts as a…

We review the transmission of Dirac electrons through a potential barrier in the presence of circularly polarized light. A different type of transmission is demonstrated and explained. Perfect transmission for nearly head-on collision in…

We study the spin transport phenomena in two-dimensional graphene-like materials with arbitrary tilted Dirac cones. The tilt arises due to next-nearest hopping when the bottom of the conduction band and top of the valence band does not…

We theoretically investigate the spectrum of a single electron double quantum dot, defined by top gates in a graphene with a substrate induced gap. We examine the effects of electric and magnetic fields on the spectrum of localized states,…

We propose and analize a graphene tunneling transit time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer by the applied gate voltages of different polarity. The depleted i-section…

We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…

We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism,…

We demonstrate that plasmons in graphene can be manipulated using a DC current. A source-drain current lifts the forward/backward degeneracy of the plasmons, creating two modes with different propagation properties parallel and antiparallel…

Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that…