Related papers: Gate-controlled current switch in graphene
We propose two schemes of field-effect transistor based on gapped armchair graphene nanoribbons connected to metal leads, by introducing sidearms or on-site gate voltages. We make use of the band gap to reach excellent switch-off character.…
Motivated by recent proposals on strain-engineering of graphene electronic circuits we calculate conductivity, shot-noise and the density of states in periodically deformed graphene. We provide the solution to the Dirac-Kronig-Penney model,…
We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and…
Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The…
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer…
Transport properties through wide and short ballistic graphene junctions are studied in the presence of arbitrary dopings and magnetic fields. No dependence on the magnetic field is observed at the Dirac point for any current cumulant, just…
If a device like a graphene nanoribbon (GNR) has all its four corners attached to electric current leads, the device becomes a quantum junction through which two electrical circuits can interact. We study such system theoretically for…
The increasing scale of alternating current and direct current (AC/DC) hybrid systems necessitates a faster power flow analysis tool than ever. This letter thus proposes a specific physics-guided graph neural network (PG-GNN). The tailored…
We show that the feature of Klein tunneling makes graphene a unique interface for implementing low control quantum gates between static and mobile qubits. A ballistic electron spin is considered as the mobile qubit, while the static qubit…
The excellent mechanical properties make graphene promising for realizing nanomechanical resonators with high resonant frequencies, large quality factors, strong nonlinearities, and the capability to effectively interface with various…
In graphene, long-wavelength deformations that result in elastic shear strain couple to the low-energy Dirac electrons as pseudogauge fields. Using a scalable tight-binding model, we consider analogs to magnetotransport in mesoscopic…
Quantum dynamics and kinetics of electrically gated graphene ribbons with lateral n-p and e-n-p junctions under magnetic field are investigated. It is shown that the snake-like states of quasiparticles skipping along the n-p interface do…
The ultrafast response and broadband absorption of all-optical graphene switches are highly desirable features for on-chip photonic switching. However, because graphene is an atomically thin material, its absorption of guided optical modes…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
We investigate real- and lattice-spin currents controlled by strain in a silicene-based junction, where chemical potential, perpendicular electric field and circularly polarized light are applied into the strained barrier. We find that the…
Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed…
We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n…
Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also…