Related papers: Ultra-low-voltage bilayer graphene tunnel FET
Opening, in a controllable way, the energy gap in the electronic spectrum of graphene is necessary for many potential applications, including an efficient carbon-based transistor. We have shown that this can be achieved by chemical…
We investigate the thermoelectric performance of armchair graphene nanoribbon (AGNR), bilayer GNRs junction (BGNRJ) and BGNRJ with holes (BGNRJ-H) by the first principles calculation with non-equilibrium Green function. It is found that the…
We study the interacting transport properties of twisted bilayer graphene (TBG) using the topological heavy-fermion (THF) model. In the THF model, TBG comprises localized, correlated $f$-electrons and itinerant, dispersive $c$-electrons. We…
We study the electron-phonon coupling in twisted bilayer graphene (TBG), which was recently experimentally observed to exhibit superconductivity around the magic twist angle $\theta\approx 1.05^\circ$. We show that phonon-mediated electron…
The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a…
We report the experimental observation of Fabry-P\'erot (FP) interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene (BLG) device. The high quality of the BLG flake, combined with the device's electrical…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
We propose and analize a graphene tunneling transit time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer by the applied gate voltages of different polarity. The depleted i-section…
Graphene intercalation materials are potentially promising for the implementation of the ultra-low power, excitonic-condensate-based Bilayer pseudoSpin Field-Effect Transistor (BiSFET) concept, as well as other novel device concepts…
We introduce a minimum tight-binding model with only three parameters extracted from graphene and untwisted bilayer graphene. This model reproduces quantitatively the electronic structure of not only these two systems and bulk graphite near…
Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
One- and two-dimensional bilayer systems are examples of ultra-tunable quantum materials that are considered as the basis for the new generation of electronic and photonic devices. Here we develop a general theory of the electron band…
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional…
The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer.…
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show…
We report on realization and quantum transport study of a twisted bilayer graphene (tBLG) Josephson junction device. High-quality tBLG employed in the device fabrication is obtained via chemical vapour deposition and the device is…
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned…
The discovery of magic angle twisted bilayer graphene (MATBG) has unveiled a rich variety of superconducting, magnetic and topologically nontrivial phases. The existence of all these phases in one material, and their tunability, has opened…