Related papers: Highly enhanced thermopower in two-dimensional ele…
We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the…
We report thermopower ($S$) and electrical resistivity ($\rho_{2DES}$) measurements in low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We…
We present thermopower measurements on a high electron mobility two-dimensional electron gas (2DEG) in a thin suspended membrane.We show that the small dimension of the membrane substantially reduces the thermal conductivity compared to…
The longitudinal thermopower of ultra-high mobility two-dimensional electrons has been measured at both zero magnetic field and at high fields in the compressible metallic state at filling factor $\nu = 3/2$ and the incompressible…
We study the low-temperature thermopower of micron sized, free-standing membranes containing a two-dimensional electron system. Suspended membranes of 320 nm thickness including a high electron mobility structure in Hall bar geometry of 34…
A simple hot electron thermocouple is realized in a two-dimensional electron system (2DES) and used to measure the diffusion thermopower of the 2DES at zero magnetic field. This hot electron technique, which requires no micron-scale…
Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be…
With decreasing density $n_s$ the thermopower $S$ of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density…
The thermopower of mesoscopic normal metal/superconductor structures has been measured at low temperatures. Effect of supercurrent present in normal part of the structure was studied in two cases: when it was created by applied external…
Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance $G$ versus gate…
Thermoelectric power, S(T) of the Mg1-xAlxB2 system has been measured for x = 0.0, 0.1, 0.2, 0.4, 0.6, 0.8 and 1.0. XRD, resistivity and magnetization measurements are also presented. It has been found that the thermoelectric power is…
We measure the temperature of a 2D electron gas in GaAs from the thermopower of a one-dimensional ballistic constriction, using the Mott relation to confirm the calibration from the electrical conductance. Under hot electron conditions,…
We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with…
The low magnetic field diffusion thermopower of a high mobility GaAs-heterostructure has been measured directly on an electrostatically defined micron-scale Hall-bar structure at low temperature (T = 1.6 K) in the low magnetic field regime…
Confined electrons in low dimensions host desirable material functions for downscaled electronics as well as advanced energy technologies. Thermoelectricity is a most fascinating example, since the dimensionality modifies the electron…
Using the merger of local density approximation and dynamical mean field theory, we show how electronic correlations increase the thermopower of Na$_{0.7}$CoO$_2$ by 200%. The newly revealed mechanism is an asymmetric shift of (quasi)…
A scanning force microscope with a base temperature below 300 mK is used for measuring the local electron density of a two-dimensional electron gas embedded in an Ga[Al]As heterostructure. At different separations between AFM tip and…
The diffusion of energy that is locally deposited into two-dimensional electron gases by Joule heating generates transverse voltages across devices with broken symmetry. For mesoscopic structures characterized by device dimensions…
We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion $S^{d}$ and the phonon-drag $S^{g}$ contributions to the thermopower. We…
We present thermopower $S$ and resistance $R$ measurements on GaAs-based mesoscopic two-dimensional electron gases (2DEGs) as functions of the electron density $n_s$. At high $n_s$ we observe good agreement between the measured $S$ and…