Related papers: Ultra-low noise field-effect transistor from multi…
Thermal fluctuations of different origin in the substrate and in the coating of optical mirrors produce phase noise in the reflected wave. This noise determines the ultimate stabilization capability of high-Q cavities used as a reference…
Transmission profiles in bilayer graphene have been studied theoretically in presence of a pair of delta function magnetic barriers. Two types of asymmetric Fano resonances are discussed in connection to the electronic cloaking effect in…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
Transport measurements normally provide a macroscopic, averaged view of the sample, so that disorder prevents the observation of fragile interaction induced states. Here, we demonstrate that transconductance fluctuations in a graphene field…
Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…
A general method for directly measuring the low-frequency flux noise (below 10 Hz) in compound Josephson junction superconducting flux qubits has been used to study a series of 85 devices of varying design. The variation in flux noise…
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…
High-permeability magnetic shields generate magnetic field noise that can limit the sensitivity of modern precision measurements. We show that calculations based on the fluctuation-dissipation theorem allow quantitative evaluation of…
We have measured the low frequency (1mHz<f<10Hz) resistance fluctuations in metallic nanowires (diameter 15nm to 200nm) in the temperature range 77K to 400K. The nanowires were grown electrochemically in polycarbonate membranes and the…
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…
We introduce effective field theories for the electronic properties of graphene in terms of relativistic fermions propagating in 2+1 dimensions, and outline how strong inter-electron interactions may be modelled by numerical simulation of a…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes…
The electronic and vibrational properties of 2D materials are dramatically altered by the formation of a moir\'e superlattice. The lowest-energy phonon modes of the superlattice are two acoustic branches (called phasons) that describe the…
We show that the low-energy electronic structure of graphene under a one-dimensional inhomogeneous magnetic field can be mapped into that of graphene under an electric field or vice versa. As a direct application of this transformation, we…
Superconducting quantum interference devices (SQUIDs) and related circuits made of aluminum are known to display $1/\omega$ flux noise, where $\omega$ is frequency. A recent experiment showed that the application of an external magnetic…
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…
Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional…