Related papers: Spin-Related Current Suppression in a Semiconducto…
We investigate electronic transport in a three-terminal hybrid system, composed by an interacting quantum dot tunnel coupled to one superconducting, one ferromagnetic, and one normal lead. Despite the tendency of the charging energy to…
Weak spin-orbit coupling produces very limited current induced spin accumulation in semiconductor nanostructures. We demonstrate a possibility to increase parametrically the spin polarization using the Kondo effect. As a model object we…
Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low temperature electron transport through etched 50-70nm…
Spin and charge transport through a quantum dot coupled to external nonmagnetic leads is analyzed theoretically in terms of the non-equilibrium Green function formalism based on the equation of motion method. The dot is assumed to be…
We study electronic transport through quantum dots weakly coupled to ferromagnetic leads with collinear magnetization directions. Tunneling contributions of first and second order in the tunnel-coupling strength are taken into account. We…
We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
We report selective injection of both spin-up and spin-down single electrons into a quantum dot (QD) from spin-polarized non-equilibrium quantum Hall edge channels (ECs) generated by selective transmission of spin-resolved ECs using a…
We study an influence of a finite magnetic field on a small spin-degenerate quantum dot with even number of electrons, attached to metallic leads. It is shown that, under certain conditions, the low energy physics of the system can be…
We study the charge current transmitted through the correlated quantum dot characterized by a finite magnitude of the Coulomb interaction |U|. At low temperatures the correlations can lead to appearance of the spin (for U>0) or charge (for…
We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate…
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of…
We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunnelling we observe a finite current flowing through the unbiased Coulomb…
The electric current and the magnetoresistance effect are studied in a double quantum-dot system, where one of the dots QDa is coupled to two ferromagnetic electrodes (F1,F2), while the second QDb is connected to a superconductor S. For…
We study an interacting single-level quantum dot weakly coupled to three electrodes. When two electrodes are biased by voltages with opposite polarities, while keeping the third lead (the stem) grounded, the current through the stem is a…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and…
Electronic transport through a single-wall metallic carbon nanotube weakly coupled to one ferromagnetic and one nonmagnetic lead is analyzed in the sequential tunneling limit. It is shown that both the spin and charge currents flowing…
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect,…
A new theoretical method is introduced to study coherent electron transport in an interacting multilevel quantum dot. The method yields the correct behavior both in the limit of weak and strong coupling to the leads, giving a unified…
Recent advances in quantum electronics have allowed to engineer hybrid nano-devices comprising on chip a microwave electromagnetic resonator coupled to an artificial atom, a quantum dot. These systems realize novel platforms to explore…