Related papers: Sensitivity of spin-torque diodes for frequency-tu…

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…

We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate…

Spin waves - the elementary excitations of magnetic materials - are prime candidate signal carriers for low dissipation information processing. Being able to image coherent spin-wave transport is crucial for developing interference-based…

We investigate the influence of the domain wall ferromagnetic resonance frequency on the spin transfer torque in a ferromagnetic nanowire. By employing micromagnetic simulations with the spin transfer torque, we find that the domain wall…

We study the electro-physical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ). Sample structures are fabricated on top of glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10^-4 Torr). The influence of…

We present a simple home made solution enabling in-situ RF reflectometry measurements with a millikelvin scanning tunneling microscope (mk-STM). The additions described below were made using RF best practices following similar detection…

Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with…

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…

For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…

We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements…

We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…

We study how the shape of the spinwave resonance lines in rf-voltage induced FMR can be used to extract the spinwave density of states and the damping within the precessing layer in nanoscale tunnel junctions that possess perpendicular…

Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed,…

The field of 2D magnetic materials has paved the way for the development of spintronics and nanodevices with new functionalities. Utilizing antiferromagnetic materials, in addition to layered van der Waals (vdW) ferromagnetic materials, has…

Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$…

We report on the optimization of discharge insensitive floating strip Micromegas (MICRO-MEsh GASeous) detectors, fit for use in high-energy muon spectrometers. The suitability of these detectors for particle tracking is shown in…

The broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer…

Motivated by the prospects of increased measurement bandwidth, improved signal to noise ratio and access to the full complex magnetic susceptibility we develop a technique to extract microwave voltages from our high resistance (10…

Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…

We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…