Related papers: Silicon surface with giant spin-splitting
We establish a general Rashba Hamiltonian for trilayer graphene (TLG) by introducing an extrinsic layer-dependent Rashba spin-orbit coupling (SOC) arising from the off-plane inversion symmetry breaking. Our results indicate that the band…
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…
We investigate the electronic structure of a two-dimensional electron gas created at the surface of the multi-valley semimetal 1T-PtSe$_2$. Using angle-resolved photoemission and first-principles-based surface space charge calculations, we…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…
Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf…
Spin-magnetophonon level splitting in a quantum well made of a semimagnetic wide gap semiconductor is considered. The semimagnetic semiconductors are characterized by a large effective $g$ factor. The resonance conditions $\hbar\omega_{\rm…
The typical bulk model describing 2D topological insulators (TI) consists of two types of spin-orbit terms, the so-called Dirac term which induces out-of plane spin polarization and the Rashba term which induces in-plane spin polarization.…
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new…
The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent…
We consider a single electron confined within a quantum wire in a system of two electrostatically-induced QDs defined by nearby gates. The time-varying electric field, of single GHz frequency, perpendicular to the quantum wire, is used to…
The spin precession in a cylindrical semiconductor nanowire due to Rashba spin-orbit coupling has been investigated theoretically using an InAs nanowire containing a surface two-dimensional electron gas as a model. The eigenstates,…
We investigate the spin accumulation effect in eccentric semiconductor multichannel rings with Rashba spin-orbit interaction and threaded by a magnetic flux. Due to the finite eccentricity, the spin polarization induced at the borders of…
A spin interferometer utilizing the Rashba effect is proposed. The novel design is composed of a one-dimensional (1D) straight wire and a 1D half-ring. By calculating the norm of the superposed wave function, we derive analytical…
The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two dimensional systems made of III-V, wurtzite and SiGe. We discuss the symmetry aspects of the linear and cubic in electron wavevector spin splitting in…
The Rashba spin-orbit coupling effect, primarily arising from structural-inversion asymmetry in periodic crystals, has garnered considerable attention due to its tunability and potential applications in spintronics. Its capability to…
One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable…
Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the…
We propose a lateral spin-blockade device that uses an InGaAs/InAlAs double quantum well (DQW), where the values of the Rashba spin-orbit parameter $\alpha_{\rm R}$ are opposite in sign but equal in magnitude between the constituent quantum…
We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced…
We present a theory pertaining to the asymptotic behavior of Rashba energy splitting in a quantum-well state (QWS). First, unlike previous studies, we derive $\textbf{k}$-linear Rashba term from a first-principles Hamiltonian in a…