Related papers: Two-dimensional GaAs/AlGaAs superlattice structure…
To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabrication costs. In order to reduce this cost, we propose a…
Recently reported remarkably high radiation tolerance of $\gamma$/$\beta$-Ga$_2$O$_3$ double-polymorphic structure brings this ultrawide bandgap semiconductor to the frontiers of power electronics applications that are able to operate in…
The search for highly effective and environmentally safe photocatalysts for water splitting and photovoltaic solar cells is essential for renewable solar energy conversion and storage. Based on first principles calculations, we show that…
In this paper we conduct numerical simulation of CdS/CIGS solar cells by use of the AMPS-1D software aiming to formulate the optimal design of the new multi-junction tandem solar cell providing its most efficient operation. We start with…
The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With…
Solar cells with the structure ITO-PEDOT:PSS-Ag:SnS-Al were fabricated with the active layer of tin sulphide with silver nano-particles (Ag:SnS) grown by thermal co-evaporation. To understand the influence of the silver nanoparticles on the…
A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…
The widespread use of lead-based materials in tandem solar cells raises critical environmental and health concerns due to their inherent toxicity and risk of contamination. To address this challenge, we focused on lead-free tandem…
We theoretically study the efficiency limits and performance characteristics of few-layer graphene-semiconductor solar cells (FGSCs) based on a Schottky contact device structure. We model and compare the energy conversion efficiency of…
We report on fabrication and performance of submicron Ni/Au/Ge contacts to a two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Utilizing scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and low…
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical…
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is…
Electron transport in GaN/AlxGa1-xN superlattices is investigated using a single particle Monte Carlo approach. To establish the band structure required GaN, AlN and their ternary alloy are investigated using a single electron Monte Carlo…
Photovoltaic materials are recognized for their potential as sustainable energy sources that enable the conversion between light and electrical energy. However, solar cells have been unable to surpass the theoretical limit of 32%, known as…
The photovoltaic properties of (0001) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those of conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative…
Metal sulfides are emerging as an important class of materials for photocatalytic applications, because of their high photo responsive nature in the wide visible light range. CdS in this class of materials, have a direct band gap of 2.4 eV,…
Understanding and control of thermal transport in solids at nanoscale is crucial to engineer and to enhance properties of a new generation of optoelectronic, thermoelectric, and photonic devices. In this regard, semiconductor superlattice…
The performances of various configurations of InGaN solar cells are compared using nextnano software. Here we compare a flat base graded wall GaN/InGaN structure, with an InxGa1-xN well with sharp GaN contact layers, and an InxGa1-xN…
We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAs absorber with built-in GaSb type-II quantum dots (QDs) [a gradual AlxGa1-xAs absorber with built-in AlyGa1-ySb QDs (0<x=y<0.40) as a variant] separated from the…
We report on the fabrication and optimization of semi-transparent antimony sulfide (Sb$_2$S$_3$) thin-film solar cells in a superstrate configuration, using RF magnetron sputtering of metallic antimony followed by post-deposition…