Related papers: Critical issues in the formation of quantum comput…
Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the…
We investigate theoretically the transport properties of a closed Aharonov-Bohm interferometer containing two quantum dots in the strong coupling regime. We find two distinct physical scenarios depending on the strength of the interdot…
We report on the immersion of a spin-qubit encoded in a single trapped ion into a spin-polarized neutral atom environment, which possesses both continuous (motional) and discrete (spin) degrees of freedom. The environment offers the…
Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but…
We report on the observation of Kondo and split Kondo peaks in single-molecule transistors containing a single spin transition molecule with a Fe2+ ion. Coulomb blockade characteristics reveal a double quantum dot behavior in a parallel…
We introduce a new quantum embedding method to explore spin-phonon interactions in molecular magnets. This technique consolidates various spin/phonon couplings into a limited number of collective degrees of freedom, allowing for a fully…
Dispersed impurities in diamond present a flourishing platform for research in quantum informatics, spintronics and single phonon emitters. Based on the vast pool of experimental and theoretical work describing impurity atoms in diamond, we…
An electron-nucleon double spin(ENDOS) solid-state quantum computer scheme is proposed. In this scheme, the qubits are the nuclear spins of phosphorus ion implanted on the (111) surface of $^{28}$Si substrate. An $^{13}$C atom on a scanning…
Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that the formation of…
The layered organic compounds, kappa-(BEDT-TTF)_2Cu[N(CN)_2X (X=Cl, Br) are metals at ambient temperatures. At low temperatures, the Cl compound is a weakly ferromagnetic Mott insulator while the isostructural Br compound is a…
In this paper we show how the IBM superconducting chips can be a powerful tool for teaching foundations of quantum mechanics for undergraduate students (for graduates as well, in some cases). To this end, we briefly discuss about the main…
A theoretical spin-based scheme for performing a variety of quantum computations is presented. It makes use of an array of multiple identical computer vectors of phosphorus-doped silicon where the nuclei serve as logical qubits and the…
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…
The observed results for the azimuthal single spin asymmetries (SSAs) of the proton, measured in the semi-inclusive deep inelastic scattering (SIDIS), can be explained by the final-state interaction (FSI) from the gluon exchange between the…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
In organic semiconductors, bi-excitons are key intermediates in carrier-multiplication and exciton annihilation. Their local geometry governs their electronic properties and yet has been challenging to determine. Here, we access the…
We present a systematic and realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design. A two-valley equation is developed to describe the ground state of phosphorous donors in strained silicon…
Ion transport across solid solid interfaces is often slower than through the bulk of a material, impeding the charge and discharge rate of batteries. Designing highly conductive interfaces is challenging due to the need to probe ion…
The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room temperature quantum spin Hall insulators made of group V atoms. We perform large-scale quantum transport calculations in these 2d materials to…
The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of…