Related papers: Asymmetric Bias Dependence in Double Spin Filter T…
We report first-principles analysis on the bias dependence of spin-transfer torque (STT) in Fe/MgO/Fe magnetic tunnel junctions. The in-plane STT changes from linear to nonlinear dependence as the bias voltage is increased from zero. The…
We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and…
We study theoretically the spin-dependent transport in ferromagnet/normal-metal/ferromagnet double tunnel junctions by special attention to cotunneling in the Coulomb blockade region. The spin accumulation caused by cotunneling squeezes the…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is…
We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…
We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model,…
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order…
The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather…
Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
We investigate theoretically the spin-independent tunneling magnetoresistance effect in a graphene monolayer modulated by two parallel ferromagnets deposited on a dielectric layer. For the parallel magnetization configuration, Klein…
Hexagonal boron nitride ($h$-BN), with its strong in-plane bonding and good lattice match to hcp and fcc metals, offers a promising alternative barrier material for magnetic tunnel junctions (MTJs). Here, we investigate spin-dependent…
We report the observation of enhanced spin dependent shot noise in magnetic tunnel barriers, suggesting transport through localized states within the barrier. This is supported by the existence of negative magnetoresistance and structure in…
We theoretically study a tunneling effect in a two-dimensional Dirac semimetal with two Dirac points protected by non-symmorphic symmetries. The tunnel barrier can be arranged by a magnetic exchange potential which opens a gap at the Dirac…
The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…
Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…