Related papers: Modified Confinement Model for Size Dependent Rama…
A comparison of experimentally observed Raman scattering data with Raman line-shapes, generated theoretically using phonon confinement model, has been carried out to understand the sensitivity of different Raman spectral parameters on…
Confined acoustic and optical phonons in Si nanoclusters embedded in sapphire, synthesized using ion-beam implantation are investigated using Raman spectroscopy. The l = 0 and l = 2 confined acoustic phonons, found at low Raman shift, are…
A comparative analysis of two Raman line-shape functions has been carried out to validate the true representation of experimentally observed Raman scattering data for semiconducting nanomaterials. A modified form of already existing phonon…
An analytical form of the Raman shift dependence on size of nanocrystals is presented. Based on the hard confinement model, it works in those cases where the average phonon curve shows a quadratic dependence on the phonon quasi-momentum in…
For nanoscale systems such as nanoparticles and 3D-bonded networks, the range of spatial coherence is well reflected in the Raman spectral pattern. For confined, or localized, phonons, the range of q-points contributing to the spectrum…
A step-by-step evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is presented here for low dimensional semiconductors. The evolution reported here is based on the phonon confinement model which is…
1LO optical phonons in free-standing mixed Cd1-xZnxS nanocrystals, synthesized using chemical precipitation, are investigated using Raman spectroscopy. As expected for the nanocrystals, the 1-LO modes are found to appear at slightly lower…
Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman…
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…
In this letter, we propose a new model that explains the Raman peak downshift observed in nanoparticles with respect to bulk materials. The proposed model takes into account discreteness of the vibrational spectra of nanoparticles. For…
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV,…
Raman spectroscopy of crystalline/molecular systems is well backed with quantum chemical calculations and group theory, making it a unique characterization tool. For the "intermediate" case of nanoscale systems, however, the use of Raman…
The redshifts and asymmetric broadening observed in nanocrystal Raman Spectra are attributed to the quantum confinement effects by some authors. But others show that they may come from the local heating caused by the incident laser as well.…
We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the…
Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si…
The observation of pure phonon confinement effect in germanium nanowires is limited due to the illumination sensitivity of Raman spectra. In this paper we measured Raman spectra for different size germanium nanowires with different…
Microscopic description of Raman spectra in nanopowders of nonpolar crystals is accomplished by developing the theory of disorder-induced broadening of optical vibrational eigenmodes. Analytical treatment of this problem is performed, and…
Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. Modification of acoustic phonon spectrum in structures with periodically modulated elastic constant or mass density -…
Raman scattering from the acoustic phonons confied in si nanocrystals is investigated by a microscopic lattice-dynamical calculation. Polarized and depolarized spectra are found to be rather different, indicated from different acoustic…
The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material…