Related papers: Single-Electron Capacitance Spectroscopy of Indivi…
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to…
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When…
We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus doping profiles (so-called Si:P $\delta$-layers). We show that, in addition to the well…
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…
Superconducting circuits are exceptionally flexible, enabling many different devices from sensors to quantum computers. Separately, epitaxial semiconductor devices such as spin qubits in silicon offer more limited device variation but…
Electromagnetic embedded eigenstates, also known as bound states in the continuum (BICs), hold a great potential for applications in sensing, lasing, enhanced nonlinearities and energy harvesting. However, their demonstrations so far have…
In this work we investigate a low dimensional semiconductor system, in which the light-matter interaction is enhanced by the cooperative behavior of a large number of dipolar oscillators, at different frequencies, mutually phase locked by…
High-density structures of sub-surface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform, however, a much-needed confirmation of their dopant arrangement has been lacking. In this work,…
Electronic Raman scattering from high- and low-energy excitations was studied as a function of temperature, extent of hole doping, and energy of the incident photons in Bi_2Sr_2CaCu_2O_{8 \pm \delta} superconductors. For underdoped…
We report a measurement on quantum capacitance of individual semiconducting and small band gap SWNTs. The observed quantum capacitance is remarkably smaller than that originating from density of states and it implies a strong electron…
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples…
The combination of established nanofabrication with attractive material properties makes silicon a promising material for quantum technologies, where implanted dopants serve as qubits with high density and excellent coherence even at…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
We study within a first-principle approach the band structure, vibrational modes and electron-phonon coupling in boron, aluminum and phosphorus doped silicon in the diamond phase. Our results provide evidences that the recently discovered…
A single-walled carbon nanotube presents a seamless cylindrical graphene surface and is thus an ideal adsorption substrate for investigating the physics of atoms and molecules in two dimensions and approaching the one-dimensional limit.…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…
We report on a single-photon-to-single-atom interface, where a single photon generated by Spontaneous Parametric Down Conversion (SPDC) is absorbed by a single trapped ion. The photon is heralded by its time-correlated partner generated in…
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, individual addressability of exchange coupled donor qubits with…
We report an experimental demonstration of single-photon switching in laser-cooled $^{87}$Rb atoms. A resonant probe pulse with an energy per unit area of one photon per $\lambda^2/2\pi$ propagates through the optically thick atoms. Its…
The interactions between acceptors in semiconductors are often treated in qualitatively the same manner as those between donors. Acceptor wave functions are taken to be approximately hydrogenic and the standard hydrogen molecule…