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Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by…

Other Condensed Matter · Physics 2009-11-10 Shailesh Shukla , Deepak Kumar , Nitya Nath Shukla , Rajendra Prasad

Metal-to-insulator transitions (MITs), particularly near room temperature, have been extensively studied in nonmagnetic and conventional ferromagnetic and antiferromagnetic systems, yet the co-emergence of MIT and altermagnetism (AM)…

The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…

Strongly Correlated Electrons · Physics 2019-04-12 Shiqi Li , Qing Zhang , Pouyan Ghaemi , M. P. Sarachik

Superconductor-to-metal transition with magnetic field and gate-voltage is studied in a Josephson junction array comprising of randomly distributed lead islands on exfoliated single-layer graphene with a back-gate. The low magnetic-field…

Superconductivity · Physics 2024-08-27 Suraina Gupta , Santu Prasad Jana , Rukshana Pervin , Anjan K. Gupta

Various electronic phases emerge when applying high magnetic fields in graphite. However, the origin of a semimetal-insulator transition at $B \simeq 30\; \textrm{T}$ is still not clear, while an exotic density-wave state is theoretically…

Mesoscale and Nanoscale Physics · Physics 2018-03-16 Toshihiro Taen , Kazuhito Uchida , Toshihito Osada

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

Strongly Correlated Electrons · Physics 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the…

Transport and magnetic properties have been systematically investigated for SmMnAsO_{1-x} with controlled electron-doping. As the electron band-filling is increased with the increase of oxygen deficiency (x), the resistivity monotonically…

Strongly Correlated Electrons · Physics 2015-05-28 Y. Shiomi , S. Ishiwata , Y. Taguchi , Y. Tokura

Graphane is obtained by perfectly hydrogenating graphene. There exists an intermediate material, partially hydrogenated graphene (which we call \textit{hydrographene}), interpolating from pure graphene to pure graphane. It has various…

Mesoscale and Nanoscale Physics · Physics 2013-12-11 Motohiko Ezawa

We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…

Strongly Correlated Electrons · Physics 2017-06-13 Kaveh Ahadi , Susanne Stemmera

The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial…

We present evidence, from Lattice Monte Carlo simulations of the phase diagram of graphene as a function of the Coulomb coupling between quasiparticles, that graphene in vacuum is likely to be an insulator. We find a semimetal-insulator…

Strongly Correlated Electrons · Physics 2009-01-15 Joaquín E. Drut , Timo A. Lähde

We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved optical reflectivity. In photo excited non-equilibrium states, we found a sign reverse in transient reflectivity spectra $\Delta R/R$ (t $>$ 0), from…

Strongly Correlated Electrons · Physics 2018-05-25 X. C. Nie , H. Y. Liu , Xiu Zhang , Peng Gu , Hai-Ying Song , Fan Li , Jian-Qiao Meng , Yu-Xia Duin , Shi-Bing Liu

We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…

Condensed Matter · Physics 2007-05-23 S. V. Kravchenko , Whitney Mason , J. E. Furneaux , J. M. Caulfield , J. Singleton , V. M. Pudalov

We show that the resistivity perpendicular $\rho_c$ and parallel $\rho_a$ to the basal planes of different graphite samples show similar magnetic-field-driven metal-insulator-transitions at a field $B_c \sim 0.1 T$ applied parallel to the…

Strongly Correlated Electrons · Physics 2016-08-31 H. Kempa , P. Esquinazi , Y. Kopelevich

Zero dimensional graphene quantum dots (GQDs) exhibit interesting physical and chemical properties due to the edge effect and quantum confinement. As the number of carbon atoms in edge is more than on basal plane, GQDs are more reactive.…

Electrons in graphene aligned with hexagonal boron nitride are modelled by Dirac fermions in a correlated random-mass landscape subject to a scalar- and vector-potential disorder. We find that the system is insulating in the commensurate…

Mesoscale and Nanoscale Physics · Physics 2014-09-15 M. Titov , M. I. Katsnelson

We explore quantum-thermodynamic effects in a phosphorous (P)-doped graphene monolayer subjected to biaxial tensile strain. Introducing substitutional P atoms in the graphene lattice generates a tunable spin magnetic moment controlled by…

Mesoscale and Nanoscale Physics · Physics 2024-11-21 Natalia Cortés , J. Hernández-Tecorralco , L. Meza-Montes , R. de Coss , Patricio Vargas

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…

Materials Science · Physics 2015-05-27 Mark T. Winkler , Daniel Recht , Meng-Ju Sher , Aurore J. Said , Eric Mazur , Michael J. Aziz

We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…

Condensed Matter · Physics 2009-10-22 S. V. Kravchenko , G. V. Kravchenko , J. E. Furneaux , V. M. Pudalov , M. D'Iorio