Related papers: The standard model of spin injection
Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization…
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…
We introduce and develop a slave-spin mean-field technique for describing a generic interacting two level systems under time-dependent drivings, where an auxiliary S=1 spin is added to describe the localized character of the electrons. We…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
Recent theories of spin-current-induced magnetization reversal are formulated in terms of a spin-mixing conductance $G^{mix}$. We evaluate $G^{mix}$ from first-principles for a number of (dis)ordered interfaces between magnetic and…
We study a pseudo-spin-1/2 quantum dot in the cotunneling regime close to the particle-hole symmetric point. For a generic tunneling matrix we find a generic fixed point with interesting nonequilibrium properties, characterized by effective…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
The purpose of this article is to present the thermodynamics of the pseudospin-electron model in the case of the different type interactions between pseudospins. First, we provide an overview of the results of works which deal with the…
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through…
We develop a general out-of-equilibrium framework for a typical three-terminal setup of common use: an injector, which can be interacting, coupled by both extended tunneling and Coulomb interactions to an inhomogeneous wire with any range…
The engineered spin structures recently built and measured in scanning tunneling microscope experiments are calculated using density functional theory. By determining the precise local structure around the surface impurities, we find the Mn…
We have performed a quantum mechanic calculation (including solving the coupled Gross-Pitaevskii equations to obtain the spatial wave functions, and diagonalizing the spin-dependent Hamiltonian in the spin-space to obtain the total spin…
Generalised hydrodynamics predicts universal ballistic transport in integrable lattice systems when prepared in generic inhomogeneous initial states. However, the ballistic contribution to transport can vanish in systems with additional…
Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn…
Creating, manipulating and detecting spin polarized carriers are the key elements of spin based electronics. Most practical devices use a perpendicular geometry in which the spin currents, describing the transport of spin angular momentum,…
The dynamics of a single spin embedded in the tunnel junction (quantum point contact) between ferromagnets is addressed. Using the Keldysh technique, we derive a quantum Langevin equation. As a consequence of the spin-polarization in the…
We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polarized electrons in a III-V semiconductor single quantum well. Electron spin dynamics is controlled by the linear in momentum spin-orbit…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized circuit theory for spintronic integrated circuits based on nanomagnetic dynamics…