Related papers: The energy scale behind the metallic behaviors in …
By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…
Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as \sigma (n_s,T)=\sigma (n_s,T=0)+A(n_s)T^2 (n_s-carrier…
Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…
The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…
We report in this Letter our recent low temperature transport results in a Si/SiGe quantum well with moderate peak mobility. An apparent metal-insulating transition is observed. Within a small range of densities near the transition, the…
The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity $\sigma$ obtained experimentally, we extend…
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections…
The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon MOSFET's scales with $B/T$ for low densities in the insulating phase. Pronounced deviations occur at higher metallic-like…
Using uniaxial stress to tune Si:B through the metal-insulator transition we find the conductivity at low temperatures shows an excellent fit to scaling with temperature and stress on both sides of the transition. The scaling functions…
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just…
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…
The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…
We study how the non-Fermi-liquid two-phase state reveals itself in transport properties of high-mobility Si-MOSFETs. We have found features in zero-field transport, magnetotransport, and thermodynamic spin magnetization in a 2D correlated…
Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…
We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the…
The non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a…
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…