Related papers: Spin polarization of electron current through a po…
High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…
A mechanism to generate a spin-polarized current in a two-terminal zigzag silicene nanoribbon is predicted. As a weak local exchange field that is parallel to the surface of silicene is applied on one of edges of the silicene nanoribbon, a…
We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…
We consider spin-polarized transport in a quantum spin Hall antidot system coupled to normal leads. Due to the helical nature of the conducting edge states, the screening potential at the dot region becomes spin dependent without external…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…
We predict that the flow of unpolarized current in electron-doped GaAs and InP at room temperature is unstable at high electric fields to the dynamic formation of spin-polarized current pulses. Spin-polarized current is spontaneously…
The spin-orbit interaction enables interconversion between a charge current and a spin current. It is usually believed that in a nonmagnetic metal (NM) or at a NM/ferromagnetic metal (FM) bilayer interface, the symmetry of spin-orbit…
Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of…
Spin-orbit interaction (SOI) leads to spin precession about a momentum-dependent spin-orbit field. In a diffusive two-dimensional (2D) electron gas, the spin orientation at a given spatial position depends on which trajectory the electron…
We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…
We theoretically examine generation of spin-polarized current using multi-terminated quantum dot with spin-orbit interaction. First, a two-level quantum dot is analyzed as a minimal model, which is connected to $N$ ($\ge 2$) external leads…
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…
Ballistic transport through nanoscale devices with time-dependent Rashba-type spin-orbit interaction (SOI) can lead to spin-polarized wave packets that appear even for completely unpolarized input. The SOI that oscillates in a finite domain…
We consider theoretically transport in a spinfull one-channel interacting quantum wire placed in an external magnetic field. For the case of two point-like impurities embedded in the wire, under a small voltage bias the spin-polarized…
We propose a new scheme of spin filtering employing ballistic nanostructures in two dimensional electron gases (2DEGs). The proposal is essentially based on the spin-orbit (SO) interaction arising from the lateral confining electric field.…
Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque…
In this paper, current-induced spin polarization for two-dimensional electron gas with a general spin-orbit interaction is investigated. For isotropic energy spectrum, the in-plane current-induced spin polarization is found to be dependent…
Spin pumping is an interfacial spin current generation from the ferromagnetic layer to the non-magnetic metal at its interface. The polarization of the pumped spin current $\textbf{J}_s \propto \textbf{m}\times \dot{\textbf{m}}$ depends on…
At each of the boundaries of the two-dimensional (2D) rectangular conductor parallel to the electric current there arises a stripe with an electric field transverse to the current and a 100% electron spin polarization. The two stripes have…
The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…