Related papers: Physical mechanisms of interface-mediated interval…
We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the…
We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spin-orbit interactions. To quantify the degree of spin coherence,…
It is well known that band inversion across a straight interface in a periodic medium gives rise to interface modes that are localized near the interface and propagate along it inside the bulk spectral gap. This phenomenon constitutes the…
In the research of topological phases of matter, valley pseudospins have been introduced into photonic systems. Here, we construct a split-ring photonic crystal (SPC) in which the spilt rings are distributed according to the Kagome model.…
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…
The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics…
The presence of spin-orbit coupling drives the anomalous magnetotransport at oxide interfaces and forms the basis for numerous intriguing properties of these 2D electron systems, such as topologically protected phases or anti-localization.…
Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating…
We study the band structure of the $\text{Bi}_2\text{Se}_3$ topological insulator (111) surface using angle-resolved photoemission spectroscopy. We examine the situation where two sets of quantized subbands exhibiting different Rashba…
The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac…
We study the conductance properties of a straight two-dimensional quantum wire with impurities modeled by $s$-like scatterers. Their presence can lead to strong inter-channel coupling. It was shown that such systems depend sensitively on…
The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized…
Physical properties reflecting valley asymmetry of Landau levels in a biased bilayer graphene under magnetic field are discussed. Within the $4-$band continuum model with Hartree-corrected self-consistent gap and finite damping factor we…
The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy.…
We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…
The theory of quantum feedback networks has recently been developed with the aim of showing how quantum input-output components may be connected together so as to control, stabilize or enhance the performance of one of the subcomponents. In…
The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunneling microscope…
An intrinsic feature of nearly all internal interfaces in crystalline systems (homo- and hetero-phase) is the presence of disconnections (topological line defects constrained to the interface that have both step and dislocation character).…
Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate for implementing a spin-photon interface. These interfaces are…
Motivated by recent experiments on Si/SiGe quantum wells with a co-design of high electron mobility and large valley splitting [B. Paquelet Wuetz, et al., Nature Communications 14, 1385 (2023); D. D. Esposti, et al., arXiv:2309.02832],…