Related papers: Physical mechanisms of interface-mediated interval…
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…
Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. While extrinsic mechanisms can in general be…
Quantum frequency converters that enable the interface between the itinerant photons and qubits are indispensable for realizing long-distance quantum network. However, the cascaded connection between converters and qubits usually brings…
Superconducting circuits rank among the most interesting architectures for the implementation of quantum information processing devices. The recently proposed 0-$\pi$ qubit [Brooks et al., Phys. Rev. A ${\bf 87}$, 52306 (2013)] promises…
We theoretically show that spontaneously interlayer-coherent bilayer quantum Hall droplets should allow robust and fault-tolerant pseudospin quantum computation in semiconductor nanostructures with voltage-tuned external gates providing…
First-principles scattering calculations are used to investigate spin transport through interfaces between diffusive nonmagnetic metals where the symmetry lowering leads to an enhancement of the effect of spin-orbit coupling (SOC) and to a…
This article studies the decoherence induced on a system of two qubits by local interactions with a spin chain with nontrivial internal dynamics (governed by an XY Hamiltonian). Special attention is payed to the transition between two…
Transition metal dichalcogenides provide a platform for exploring spin-valley physics, offering a promising approach to electric-field-driven spin control for low-power spintronic and quantum devices. Here, we demonstrate…
We consider exciton-photon coupling in semiconductor microcavities in which separate periodic potentials have been embedded for excitons and photons. We show theoretically that this system supports degenerate ground-states appearing at…
Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that…
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the…
We investigate theoretically perturbations to the confining potential capable of lifting spin degeneracy in axially symmetric quasi-one-dimensional electron gases with the spin-orbit interaction. The role of two different types of…
In bulk silicon, intervalley electronic interference has been shown to lead to strong oscillations in the exchange coupling between impurity electronic wavefunctions, posing a serious manufacturability problem for proposed quantum…
We show how the spin independent scattering between two identical flying qubits can be used to implement an entangling quantum gate between them. We consider one dimensional models with a delta interaction in which the qubits undergoing the…
Electron shuttling is emerging as a key mechanism for enabling long-range coupling in scalable spin-qubit architectures. Bringing shuttling waveform generation into the cryostat can improve scalability, but imposes strict area and power…
We theoretically study a single-electron spin-valley qubit in an electrostatically defined quantum dot in a transition metal dichalcogenide monolayer, focusing on the example of MoS$_2$. Coupling of the qubit basis states for coherent…
The search for topological systems has recently broadened to include random substitutional alloys, which lack the specific crystalline symmetries that protect topological phases, raising the question whether topological properties can be…
Topological interface states in multivalley systems are studied to unravel their valley sensitivity. For this purpose, multivalley IV-VI topological crystalline insulator (TCI) heterostructures are explored using magneto-optical Landau…
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well.…
Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical…