Related papers: A first-principles systematic study of GaAs nanowi…
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…
The realization of various qubit systems based on high-quality hybrid superconducting quantum devices, is often achieved using semiconductor nanowires. For such hybrid devices, a good coupling between the superconductor and the conducting…
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitive to crystal quality and structures, there is relatively…
We study the effect of semicore states on the self-energy corrections and electronic energy gaps of silicon, germanium and GaAs. Self-energy effects are computed within the GW approach, and electronic states are expanded in a plane-wave…
Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of…
We consider theoretically the electronic structure of quasi-two and quasi-one-dimensional heterostructures comprised of III-V and II-VI semiconductors such as InAs/GaInSb and HgCdTe. We show that not only a Dirac-like dispersion exists in…
This work reports optical and electronic numerical modelling of a novel emerging structure which is the GaAs nanocrystal on Si tandem solar cell by epitaxial lateral overgrowth, a technique which allows defect free material growth. The…
High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy (HRTEM) and micro-Raman spectroscopy…
The search for theoretically predicted Wigner crystal in one-dimensional (1D) wires of structurally disordered materials exhibiting properties of charge-density-waves have remained unsuccessful. Based on the results of a low temperature…
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al$_{2}$O$_{3}(0001)$ substrates. The shifts of Bragg peaks in…
We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite GaAs cores between 20-40\,nm induce large confinement energies of several tens of meV, allowing us to experimentally resolve up to four well…
We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We…
We report the first quasiparticle calculations of the newly observed wurtzite polymorph of InAs and GaAs. The calculations are performed in the GW approximation using plane waves and pseudopotentials. For comparison we also report the study…
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/In$_{0.15}$Ga$_{0.85}$As/GaAs/AlAs/GaAs nanowires. Fabricated by molecular beam epitaxy on a pre-patterned Si(111)…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
The nodal-line semimetals NaAlSi and NaAlGe have significantly different ground states despite having similar electronic structures: NaAlSi exhibits superconductivity below 7 K, while NaAlGe exhibits semiconductive electrical conductivity…
We performed density-functional calculations to investigate the electronic structure of ZnO/GaN core/shell heterostructured nanowires (NWs) orientating along <0001> direction. The build-in electric filed arising from the charge…
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that…
Multishell helical gold nanowires (HGNs) suspended between semi-infinite electrodes are found to exhibit peculiar electron-conduction properties by first-principles calculations based on the density functional theory. Our results that the…
Atomic models of quasi-one-dimensional 1D vanadium oxide nanostructures - nanotubes of various morphology (cylinder or scroll-like) formed by rolling (010) single layers of V2O5 are constructed and their electronic properties are studied…