Related papers: Reversal of current blockade through multiple trap…
We investigate the transport properties of a new class of ratchets. The device is constructed by applying an ac voltage to the metallic single electron tunneling transistor, and a net transport current is induced by the time-dependent…
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for…
Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to…
We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
We have investigated random telegraph noise (RTN) observed in individual metallic carbon nanotubes (CNTs). Mean lifetimes in high- and low-current states, shigh and slow, have been studied as a function of bias-voltage and gate-voltage as…
We use an artificial neural network to analyze asymmetric noisy random telegraph signals (RTSs), and extract underlying transition rates. We demonstrate that a long short-term memory neural network can vastly outperform conventional…
We present a detailed study of the transport and the efficiency of a ratchet system in a periodic potential in the presence of correlated noises. The current and the efficiency of the system are investigated. It is found that, when the…
Electronic circuits are built by combining components with known current/voltage characteristics, which are intrinsic to each component and independent of the rest of the circuit. This approach breaks down for nanostructures placed at…
In this paper it is demonstrated that 1/f power spectrum appears in the process originated by the superposition of many single-sided random telegraph signals (RTS or RTN) with the same amplitude, probability and relaxation time. Indeed, the…
We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the…
One of the many measures of the non-equilibrium nature of a system is the existence of a non-zero steady state current which is especially relevant for many biological systems. To this end, we study the non-equilibrium dynamics of a…
The fully self-consistent non-equilibrium Green functions (NEGFs) approach to the quantum transport is developed for the investigation of one-dimensional nano-scale devices. Numerical calculations performed for resonant tunneling diodes…
Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\textit{f} noise. In a previous work,…
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and…
We report unexpectedly large noise in the current from nanopatterned PbS quantum dot films. The noise is proportional to the current when the latter is varied by changing the source-drain bias, gate voltage or temperature. The spectral…
We present analytic results for the current in a system moving in an arbitrary periodic potential and driven by weak Gaussian noise with an arbitrary power spectrum which are valid to order (t_c/t_r)^2, where t_c is the largest…
Breaking time-reversal symmetry (TRS) in the absence of a net bias can give rise to directed steady-state non-equilibrium transport phenomena such as ratchet effects. Here we present, theoretically and experimentally, the concept of a…
Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an ensemble of a huge number of charges trapping and detrapping.…
Based on our recently developed quantum transport theory in term of an exact master equation, the corresponding particle-number resolved ($n$-resolved) master equation and the related shot noise spectrum formalism covering the full…