Related papers: Voltage controlled nuclear polarization switching …
We demonstrate optical control of the polarization eigenstates of a neutral quantum dot exciton without any external fields. By varying the excitation power of a circularly polarized laser in micro-photoluminescence experiments on…
We demonstrate bias control of the hyperfine coupling between a single electron in an InAs quantum dot and the surrounding nuclear spins monitored through the positively charged exciton X+ emission. In applied longitudinal magnetic fields…
Sizable nuclear spin polarization is pumped in individual InP/GaInP dots in a wide range of external magnetic fields B_ext=0-5T by circularly polarized optical excitation. We observe nuclear polarization of up to ~40% at Bext=1.5T and…
Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay…
The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a…
We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become…
We demonstrate dynamical nuclear spin polarization in the absence of an external magnetic field, by resonant circularly polarized optical excitation of a single electron or hole charged quantum dot. Optical pumping of the electron spin…
The significance of nuclear spin polarisation in time-resolved optical studies of III-V semiconductors is addressed. Electron Larmor beats in pump-probe reflectivity from a GaAs/AlGaAs quantum well show Overhauser shift of 0.7 T due to…
Early experiments on spin-blockaded double quantum dots revealed surprising robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias [see e.g. K. Ono, S. Tarucha, Phys. Rev. Lett. 92, 256803 (2004)].…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
We proposed and demonstrated that the nuclear spins of the host lattice in GaAs double quantum dots can be strongly polarized in either of two opposite directions, parallel or antiparallel to an external magnetic field. The direction is…
We report the hysteresis of optically-pumped nuclear spin polarization and the degree of circular polarization of photoluminescence on the excitation power and electron spin polarization in single InAlAs quantum dots. By increasing (or…
In many electron spin qubit systems coherent control is impaired by the fluctuating nuclear spin bath of the host material. Previous experiments have shown dynamic nuclear polarization with feedback to significantly prolong the…
Irradiating a semiconductor with circularly polarized light creates spin-polarized charge carriers. If the material contains atoms with non-zero nuclear spin, they interact with the electron spins via the hyperfine coupling. Here, we…
The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pumping in transverse magnetic…
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular…
Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots…
We report the optical spectroscopic results of a single self-assembled InAlAs/Al GaAs quantum dot. The polarization-dependent shift of the Zeeman splitting in a single InAlAs QD has been observed. The induced Overhauser field is estimated…