Related papers: Fermi-edge Singularity in II-VI Semiconductor Reso…
We have fabricated a variety of novel molecular tunnel junctions based on self-assembled-monolayers (SAM) of two-component solid-state mixtures of molecular wires (1,4 methane benzene-dithiol; Me-BDT with two thiol anchoring groups), and…
We use quantum kinetic theory to calculate the thermoelectric transport properties of the 2D single band Fermi-Hubbard model in the weak coupling limit. For generic filling, we find that the high-temperature limiting behaviors of the…
A one-dimensional, two-channel quantum wire is studied in the effective non-Hermitian Hamiltonian framework. Analytical expressions are derived for the band structure of the isolated wire. Quantum states and transport properties of the wire…
In a quasi two-dimensional electron system with non-zero layer thickness, a parallel magnetic field (B||) can couple to the out-of-plane electron motion and lead to a severe distortion and eventual disintegration of the Fermi contour. Here…
Very recently, borophene has been attracting extensive and ongoing interest as the new wonder material with structural polymorphism and superior attributes, showing that the structural imperfection of line defects (LDs) occurs widely at the…
We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level…
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the…
We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and…
The problem of resonant transport of strongly interacting electrons through a one-dimensional single-level vibrating quantum dot is being considered. In this paper, we generalize the Komnik and Gogolin model [Phys. Rev. Lett., 90, 246403,…
We observe a resonance in the conductance of silicon tunneling devices with a delta-doped barrier. The position of the resonance indicates that it arises from tunneling through the B^+ state of the boron atoms of the delta-layer. Since the…
Quantitative differences of Lagrange multipliers between standard Fermi-Dirac statistics (FDS) and Ionization energy ($E_I$) based FDS (iFDS) are analyzed in detail to obtain reasonably accurate interpretations without violating the…
Topological nodal-line semimetals support protected band crossings which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line…
We report on the direct probing of the Fermi surface in the bulk of the electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_4$ at different doping levels by means of magnetoresistance quantum oscillations. Our data reveal a sharp qualitative…
We have analyzed the tunneling transmission probability and electronic current density through resonant heterostructures in the presence of an external electromagnetic field. In this work, we compare two different models for a double…
We address the problem of non-linear transport through discrete electronic levels in a small quantum dot coupled to superconducting electrodes. In our approach the low temperature I-V characteristics can be calculated including all multiple…
Tunnelling conductances observed for mesoscopic Kondo systems exhibit a zero-bias peak and two coherent side peaks. The former peak is usually understood as a Kondo effect and the latter side peak is recently clarified as the effect of…
This paper extends the modern theory of tunneling transport to finite temperatures. The extension enables applications to molecular electronic devices connected to semiconducting leads. The paper presents an application of the theory to…
Electron transport in a self-consistent potential along a ballistic two-terminal conductor has been investigated. We have derived general formulas which describe the nonlinear current-voltage characteristics, differential conductance, and…
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles calculations (Sakamoto et al., Ref. 9) suggested that the…
The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report…