Related papers: Phase-transition driven memristive system
Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged…
We present an integrated circuit fabricated in a process co-integrating CMOS and hafnium-oxide memristor technology, which provides a prototyping platform for projects involving memristors. Our circuit includes the periphery circuitry for…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magn\'eli series, is one of the rare materials to exhibit an insulator-metal…
Vanadium dioxide (VO$_2$) has received significant interest in the context of nanophotonic metamaterials and memories owing to its reversible insulator-metal transition associated with significant changes in its optical and electronic…
The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…
Over the last decade, memristive devices have been widely adopted in computing for various conventional and unconventional applications. While the integration density, memory property, and nonlinear characteristics have many benefits,…
Traditional studies of memristive devices have mainly focused on their applications in non-volatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies { the…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging…
Advanced neural interfaces mediate a bio-electronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various diseases. Spikes from a large number of neurons are recorded leading…
Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…