Related papers: Multidimensional Flash Codes
Flash memory is a non-volatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…
Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…
A rewriting code construction for flash memories based upon lattices is described. The values stored in flash cells correspond to lattice points. This construction encodes information to lattice points in such a way that data can be written…
Flash memory devices are winning the competition for storage density against magnetic recording devices. This outcome results from advances in physics that allow storage of more than one bit per cell, coupled with advances in signal…
In this work, we study a new model of defect memory cells, called partially stuck-at memory cells, which is motivated by the behavior of multi-level cells in non-volatile memories such as flash memories and phase change memories. If a cell…
We have recognized that 2D codes, i.e., a group of strongly connected neurosomes that can be simultaneously excited, are the basic data carriers for memory in a brain. An echoing mechanism between two neighboring layers of neurosomes is…
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…
In this work, we study the performance of different decoding schemes for multilevel flash memories where each page in every block is encoded independently. We focus on the multi-level cell (MLC) flash memory, which is modeled as a two-user…
We study the largest possible length $B$ of $(B-1)$-dimensional linear codes over $\mathbb{F}_q$ which can correct up to $t$ errors taken from a restricted set $\mathcal{A}\subseteq \mathbb{F}_q^*$. Such codes can be applied to multilevel…
In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size $M$ can…
This paper investigates the design and application of write-once memory (WOM) codes for flash memory storage. Using ideas from Merkx ('84), we present a construction of WOM codes based on finite Euclidean geometries over $\mathbb{F}_2$.…
This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…
In this paper, we consider modulation codes for practical multilevel flash memory storage systems with cell levels. Instead of maximizing the lifetime of the device [Ajiang-isit07-01, Ajiang-isit07-02, Yaakobi_verdy_siegel_wolf_allerton08,…
Quantum memory is one of key ingredients consisting of quantum networks, therefore storing light at single photon level is an important step for realizing quantum networks. A photon, encoded in a high-dimensional state, can significantly…
The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5…
The most important challenge in the scaling down of flash memory is its increased inter-cell interference (ICI). If side information about ICI is known to the encoder, the flash memory channel can be viewed as similar to Costa's "writing on…
The pivotal storage density win achieved by solid-state devices over magnetic devices in 2015 is a result of multiple innovations in physics, architecture, and signal processing. One of the most important innovations in that regard is…