Related papers: Spin states in InAs/AlSb/GaSb semiconductor quantu…
We present a theory of collective spin excitations in diluted-magnetic-semiconductor quantum wells in which local magnetic moments are coupled via a quasi-two-dimensional gas of electrons or holes. In the case of a ferromagnetic state with…
We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated by the antiphase oscillations of the conductance and the…
Bilayer electron-hole systems with unequal electron and hole densities are expected to have exciton condensate ground states with spontaneous spin-polarization in both conduction and valence bands. In the absence of spin-orbit and…
We propose and formulate an interaction induced staggered spin-orbit order as a new emergent phase of two-dimensional Fermi gases. We show that when some form of inherent spin-splitting via Rashba-type spin-orbit coupling renders two…
The spin dynamics of an interwell excitons gas has been investigated in n-i-n GaAs/AlGaAs coupled quantum wells (CQWs). In these heterostructures the electron and the hole are spatially separated in neighboring quantum wells by a narrow…
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due…
Quantum wells in InAs/GaSb heterostructures can be tuned to a topological regime associated with the quantum spin Hall effect, which arises due to an inverted band gap and hybridized electron and hole states. Here, we investigate…
We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions…
We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…
Aiming to understand the main spin relaxation mechanism in graphene, we investigate the spin relaxation with random Rashba field induced by both adatoms and substrate, by means of the kinetic spin Bloch equation approach. The charged…
The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field…
Multi-subband plasmon (MSP) modes in heavily doped InAs/GaSb broken-gap quantum wells grown via molecular beam epitaxy (MBE) are investigated. An $8$-band $\vec{k} \cdot \vec{p}$ semiclassical model accurately predicts ellipsometric…
Spin-orbit coupling effects are studied in quantum dots in InSb, a narrow-gap material. Competition between different Rashba and Dresselhaus terms is shown to produce wholesale changes in the spectrum. The large (and negative) $g$-factor…
We review recent theoretical developments about the role of spins, electron-electron interactions, and spin-orbit coupling in metal nanoparticles and semiconductor quantum dots. For a closed system, in the absence of spin-orbit coupling or…
The spin-split states subject to Rashba spin-orbit coupling in two-dimensional systems have long been accepted as pointing inplane and perpendicular to the corresponding wave vectors. This is in general true for free electron model, but…
We present a novel semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown InAsSb surface quantum well with an in-situ deposited Nb top layer. Relative to conventional Al-InAs based systems, the InAsSb…
The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating…
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the…
The interrelation between spin and charge in semiconductors leads to interesting effects, e.g., the Rashba-type spin-orbit splitting or the exchange enhancement. These properties are proposed to be used in applications such as spin…
We study the ground-state properties of electrons confined to a quantum wire and subject to a smoothly modulated Rashba spin-orbit coupling. When the period of the modulation becomes commensurate with the band filling, the Rashba coupling…