Related papers: Impact ionization in InSb probed by THz-pump THz-p…
Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at…
We report on time-resolved optical and terahertz ultrafast spectroscopy of charge-carrier dynamics in the room-temperature antiferromagnetic semiconductor $\alpha $-MnTe. By optically pumping the system with 1.55 eV photons at room…
Carrier scattering processes are studied in CH$_3$NH$_3$PbI$_3$ using temperature-dependent four-wave mixing experiments. Our results indicate that scattering by ionized impurities limits the interband dephasing time (T$_2$) below 30~K,…
Search for stable high-pressure compounds in the Ti--H system reveals the existence of titanium hydrides with new stoichiometries, including Ibam-Ti$_2$H$_5$, I4/m-Ti$_5$H$_{13}$, I$\bar{4}$-Ti$_5$H$_{14}$, Fddd-TiH$_4$,…
The picosecond dynamics of excitons in colloidal CdSe nanorods are directly measured via their 1s to 2p-like internal transitions by ultra-broadband terahertz spectroscopy. Broadened absorption peaks from both the longitudinal and…
In this work, we observe plasmon induced hot electron extraction in a heterojunction between indium tin oxide nanocrystals and monolayer molybdenum disulphide. We study the sample with ultrafast differential transmission exciting the sample…
Spintronic terahertz emitters (STEs) pumped by femtosecond lasers have become a widely used source of broadband terahertz radiation. However, the strength of the emitted field is limited in part by the optical damage threshold at the pump…
We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal Silicon Carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour of laser…
Heating of carriers in an intrinsic graphene under dc electric field is considered taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions due to thermal…
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect…
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and…
Electron heating and ionization dynamics in capacitively coupled radio frequency (RF) atmospheric pressure microplasmas operated in helium are investigated by Particle in Cell simulations and semi-analytical modeling. A strong heating of…
High electric conductivity ~100 MegaSiemens/m and Seebeck coefficient >200 mkV/K of carbon nanotubes (CNT) make them attractive for a variety of applications. Unfortunately, a high thermal conductivity ~ 3000 W/(m*K) due to the phonon…
We report on the first experimental observation of graphene optical emission induced by the intense THz pulse. P-doped CVD graphene with the initial Fermi energy of about 200 meV was used, optical photons was detected in the wavelength…
We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1-3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a…
We have developed an experimental setup to simultaneously acquire magneto-transmission spectra and measure the photoconductive response. The low-temperature ($T$=4.2 K) magneto-transmission data for weakly doped InSb in the frequency range…
Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier…
We quantify the spin Hall angle {\theta}SH and spin diffusion length lsd of Nb from inverse spin-Hall effect (iSHE) measurements in Nb/Ni80Fe20 bilayers under ferromagnetic resonance. By varying the Nb thickness tNb and comparing to a…
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition…
Optical and Hall-effect measurements have been performed on single crystals of Pb$_{0.77}$Sn$_{0.23}$Se, a IV-VI mixed chalcogenide. The temperature dependent (10--300 K) reflectance was measured over 40--7000 cm$^{-1}$ (5--870 meV) with an…